AOSMD AON6906A

AON6906A
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6906A is designed to provide a high efficiency
synchronous buck power stage with optimal layout and board
space utilization.It includes two specialized MOSFETs in a dual
Power DFN5x6A package. The Q1 "High Side" MOSFET is
desgined to minimze switching losses. The Q2 "Low Side"
MOSFET is desgined for low R DS(ON) to reduce conduction
losses.Power losses are minimized due to an extremely low
combination of R DS(ON) and Crss.In addition,switching behavior
is well controlled with a "Schottky style" soft recovery body
diode.
Q1
30V
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
37A
<14.4mΩ
RDS(ON) (at VGS = 4.5V)
<21.3mΩ
Q2
30V
48A
<11.7mΩ
<17.5mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
Bottom View
PIN1
Bottom View
Top View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
IDM
TA=25°C
IDSM
TA=70°C
Max Q2
Units
V
±20
V
37
ID
TC=100°C
30
48
23
30
85
100
9.1
10
7.2
8.1
A
A
Avalanche Current C
IAS, IAR
21
23
A
Avalanche Energy L=0.1mH C
EAS, EAR
22
26
mJ
TC=25°C
Power Dissipation B
PD
TC=100°C
TA=25°C
Power Dissipation A
PDSM
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Symbol
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0. Oct 2010
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
31
45
12.5
18
1.9
2
1.2
1.3
-55 to 150
Typ Q1
29
56
3.3
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Typ Q2
27
51
2.3
Max Q1 Max Q2
35
32
67
61
4
2.8
W
W
°C
Units
°C/W
°C/W
°C/W
Page 1 of 10
AON6906A
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
Gate-Body leakage current
VGS(th)
ID(ON)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
On state drain current
VGS=10V, VDS=5V
85
100
nA
1.8
2.4
V
12
14.4
17.5
21
VGS=4.5V, ID=9.1A
17
21.3
VDS=5V, ID=9.1A
30
TJ=125°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
µA
5
VDS=0V, VGS= ±20V
RDS(ON)
Crss
V
TJ=55°C
VGS=10V, ID=9.1A
Output Capacitance
Units
1
Zero Gate Voltage Drain Current
Coss
Max
30
IDSS
IS
Typ
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=9.1A
A
0.73
mΩ
mΩ
S
1
V
33
A
400
510
670
pF
150
220
310
pF
13
22
38
pF
0.9
1.8
2.7
Ω
5.9
7.4
9
nC
2.6
3.3
4.0
nC
1.2
1.5
1.8
nC
0.8
1.4
2
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=9.1A, dI/dt=500A/µs
7.2
9
11
Qrr
Body Diode Reverse Recovery Charge IF=9.1A, dI/dt=500A/µs
11.8
14.7
17.7
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
4.3
ns
8
ns
15.8
ns
3.4
ns
ns
nC
2
A. The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Oct 2010
www.aosmd.com
Page 2 of 10
AON6906A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
10V
VDS=5V
80
7V
6V
40
ID(A)
4.5V
60
ID (A)
5V
50
4V
30
40
20
3.5V
20
VGS=3V
10
0
25°C
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
0
20
1
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
Normalized On-Resistance
1.8
18
RDS(ON) (mΩ)
125°C
VGS=10V
ID=9.1A
1.6
16
VGS=4.5V
14
1.4
17
VGS=4.5V
5
ID=9.1A
2
1.2
12
10
VGS=10V
10
1
8
0
5
10
15
20
25
0.8
30
0
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
40
50
1.0E+02
1.0E+01
35
ID=9.1A
30
40
1.0E+00
125°C
1.0E-01
25
IS (A)
RDS(ON) (mΩ)
25
125°C
25°C
1.0E-02
20
1.0E-03
15
1.0E-04
10
25°C
1.0E-05
5
3
7
9
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Oct 2010
5
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0.0
0.2
0.4
0.6
0.8 1.0 1.2 1.4 1.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 10
AON6906A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=15V
ID=9.1A
Ciss
600
Capacitance (pF)
VGS (Volts)
8
6
400
4
Coss
200
2
Crss
0
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
8
160
100.0
30
RDS(ON)
limited
10.0
100us
1ms
1.0
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
1
VDS (Volts)
120
80
40
10
100
0
0.0001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
Rev 0: Oct 2010
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4°C/W
0.1
0.01
0.00001
TJ(Max)=150°C
TC=25°C
10µs
Power (W)
ID (Amps)
10 V (Volts)
15
20
25
DS
Figure 8: Capacitance Characteristics
200
1000.0
ZθJC Normalized Transient
Thermal Resistance
5
PD
Ton
Single Pulse
0.0001
0.001
T
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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10
Page 4 of 10
AON6906A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
IAR (A) Peak Avalanche Current
35
Power Dissipation (W)
30
25
TA=25°C
TA=100°C
20
TA=125°C
15
TA=150°C
10
5
0
10.0
0.000001
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
40
35
TA=25°C
1000
30
25
Power (W)
Current rating ID(A)
150
20
15
10
17
5
2
10
100
10
5
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
ZθJA Normalized Transient
Thermal Resistance
0.001
0.1
10
0
18
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
1
0.00001
40
RθJA=67°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
Rev 0: Oct 2010
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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100
1000
Page 5 of 10
AON6906A
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
Gate-Body leakage current
VGS(th)
ID(ON)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
On state drain current
VGS=10V, VDS=5V
100
VDS=0V, VGS= ±20V
100
18.2
VGS=4.5V, ID=10A
14
17.5
VDS=5V, ID=10A
25
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=10A
V
A
15.1
TJ=125°C
nA
2.3
11.7
gFS
Crss
1.8
9.7
Static Drain-Source On-Resistance
µA
5
VGS=10V, ID=10A
Output Capacitance
V
TJ=55°C
RDS(ON)
Units
1
Zero Gate Voltage Drain Current
Coss
Max
30
IDSS
IS
Typ
0.72
mΩ
mΩ
S
1
V
48
A
450
570
750
pF
180
260
370
pF
12
20
35
pF
0.9
1.8
2.7
Ω
6.5
8.2
10
nC
2.8
3.5
4.2
nC
1.2
1.6
2
nC
0.8
1.4
2
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=500A/µs
6.8
8.6
10
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
11.3
14.1
17
4.1
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
7.8
ns
15.2
ns
3.3
ns
ns
nC
2
A. The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Oct 2010
www.aosmd.com
Page 6 of 10
AON6906A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
10V
VDS=5V
80
7V
5V
50
6V
4.5V
40
ID(A)
ID (A)
60
4V
40
3.5V
20
125°C
20
VGS=3V
10
0
25°C
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
0
18
1
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
Normalized On-Resistance
1.8
16
RDS(ON) (mΩ)
30
VGS=10V
ID=10A
1.6
14
VGS=4.5V
12
10
VGS=10V
8
1.4
17
1.2
VGS=4.5V5
ID=10A 2
10
1
6
0
5
10
15
20
25
0.8
30
0
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
39
50
1.0E+02
1.0E+01
34
ID=10A
29
40
1.0E+00
125°C
1.0E-01
24
IS (A)
RDS(ON) (mΩ)
25
125°C
25°C
1.0E-02
19
1.0E-03
14
1.0E-04
9
25°C
1.0E-05
4
3
7
9
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Oct 2010
5
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 10
AON6906A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000
VDS=15V
ID=10A
800
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
600
400
Coss
200
2
Crss
0
0
0
3
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
9
160
100.0
30
RDS(ON)
limited
10.0
100us
1ms
1.0
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
1
VDS (Volts)
120
80
40
10
100
0
0.0001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
RθJC=2.8°C/W
PD
Ton
Single Pulse
Rev 0: Oct 2010
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.1
0.01
0.00001
TJ(Max)=150°C
TC=25°C
10µs
Power (W)
ID (Amps)
10 V (Volts)
15
20
25
DS
Figure 8: Capacitance Characteristics
200
1000.0
ZθJC Normalized Transient
Thermal Resistance
5
0.0001
0.001
T
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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10
Page 8 of 10
AON6906A
100
50
Power Dissipation (W)
IAR (A) Peak Avalanche Current
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
TA=25°C
TA=100°C
30
TA=125°C
TA=150°C
20
10
0
10
0.000001
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
TA=25°C
40
1000
Power (W)
Current rating ID(A)
50
10000
50
30
20
17
5
2
10
100
10
10
0
0
25
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
ZθJA Normalized Transient
Thermal Resistance
25
1
50
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
150
1
0.00001
0.001
0.1
10
0
18
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=61°C/W
0.1
PD
0.01
0.001
0.00001
Rev 0: Oct 2010
Single Pulse
0.0001
0.001
0.01
Ton
T
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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100
1000
Page 9 of 10
AON6906A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0: Oct 2010
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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Page 10 of 10