AON6970 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Q1 30V Q2 30V ID (at VGS=10V) 58A 85A RDS(ON) (at VGS=10V) <5.4mΩ <1.5mΩ RDS(ON) (at VGS=4.5V) <8.5mΩ <2.3mΩ VDS 100% UIS Tested Application 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Top View S2 S2 S2 Bottom View G2 PHASE PHASE (S1/D2) D1 D1 D1 D1 S1/D2 PIN1 D1 Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C ID TC=100°C Pulsed Drain Current C Avalanche Current IDM TA=25°C Continuous Drain Current S1/D2 G1 PIN1 Continuous Drain Current Bottom View Top View DFN5X6D Max Q2 Units V ±20 ±20 V 58 85 36 66 135 340 24 42 19 33 IDSM TA=70°C C 30 A A IAS 35 65 A Avalanche Energy L=0.05mH C EAS 31 106 mJ VDS Spike VSPIKE 36 36 V 31 78 12 31 5 4.1 3.2 2.6 100ns TC=25°C Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A PDSM TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev0 : Sep 2012 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC -55 to 150 Typ Q1 20 50 3.3 www.aosmd.com Typ Q2 25 56 1.2 Max Q1 Max Q2 25 30 60 67 4 1.6 W W °C Units °C/W °C/W °C/W Page 1 of 10 AON6970 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance 5 1.3 VGS=10V, ID=20A TJ=125°C IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A 0.3 nA 2.3 V 5.4 8.3 8.5 mΩ 1 V 35 A 0.7 Diode Forward Voltage ±100 4.4 80 Forward Transconductance VSD µA 6.8 6.7 gFS Output Capacitance 1.8 VGS=4.5V, ID=20A VDS=5V, ID=20A Units V 1 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ mΩ S 1171 pF 284 pF 59 pF 0.6 0.9 Ω 17 23 nC 8 11 nC 4.7 nC Qgd Gate Drain Charge 2 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 15.5 ns 17 ns tf Turn-Off Fall Time 2.5 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 12.3 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 22.5 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0 : Sep 2012 www.aosmd.com Page 2 of 10 AON6970 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 100 4.5V VDS=5V 4V 6V 80 80 3.5V 60 ID(A) ID (A) 60 125°C 40 40 25°C VGS=3.0V 20 20 0 0 0 1 2 3 4 0 5 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance 1.8 8 RDS(ON) (mΩ Ω) 1 VGS=4.5V 6 4 VGS=10V 2 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 14 12 1.0E+01 10 1.0E+00 125°C 8 IS (A) RDS(ON) (mΩ Ω) ID=20A ID=11.5A 125°C 6 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 4 25°C 2 1.0E-04 25°C 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0 : Sep 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 10 AON6970 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=15V ID=20A 1400 Ciss 8 Capacitance (pF) VGS (Volts) 1200 6 4 1000 800 600 Coss 400 2 Crss 200 0 0 0 5 10 15 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 TJ(Max)=150°C TC=25°C 160 100.0 10µs RDS(ON) limited 10.0 100us 1ms 10ms DC 1.0 0.1 Power (W) ID (Amps) 10 120 40 TJ(Max)=150°C TC=25°C 0.0 0.01 80 0.1 1 10 0 0.0001 100 VDS (Volts) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4°C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0 : Sep 2012 www.aosmd.com Page 4 of 10 AON6970 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 40 Current rating ID(A) Power Dissipation (W) 60 30 20 10 50 40 30 20 10 0 0 0 25 50 75 100 125 150 0 25 TCASE (° °C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 40 0.1 PD 0.01 Ton Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev0 : Sep 2012 www.aosmd.com Page 5 of 10 AON6970 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance 100 1.3 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A 0.3 mA ±100 nA 1.8 2.3 V 1.2 1.5 1.6 2 1.8 2.3 100 0.46 mΩ mΩ S 0.6 V 85 A 3973 VGS=0V, VDS=15V, f=1MHz Units V 0.5 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ pF 1100 pF 134 pF 0.65 1 Ω 60 85 nC 27 38 nC 12 nC Qgd Gate Drain Charge 10 nC tD(on) Turn-On DelayTime 11.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Qrr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 16 ns 38 ns 7 ns 20.8 ns nC 60 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0 : Sep 2012 www.aosmd.com Page 6 of 10 AON6970 100 100 3.5V 80 VDS=5V 80 4V 3V 10V 60 125°C ID(A) ID (A) 60 40 25°C 40 20 20 VGS=2.5V 0 0 0 1 2 3 4 0 5 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 Normalized On-Resistance 1.8 2.5 RDS(ON) (mΩ Ω) 1 VGS=4.5V 2 1.5 1 VGS=10V 0.5 0 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 5 10 15 20 25 30 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 4 ID=20A 1.0E+01 125°C 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 3 125°C 2 1.0E-01 25°C 1.0E-02 1.0E-03 1 25°C Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-04 0 2 4 6 8 10 1.0E-05 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0 : Sep 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 10 AON6970 10 6000 VDS=15V ID=20A 5000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 4000 3000 2000 Coss 1000 0 Crss 0 0 10 20 30 40 50 60 70 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 500 10µs 100µs 100.0 1ms RDS(ON) limited 10.0 DC 10ms 1.0 300 200 100 TJ(Max)=150°C TC=25°C 0.0 0.01 TJ(Max)=150°C TC=25°C 400 Power (W) ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 0.1 5 0.1 1 10 100 VDS (Volts) 0 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.6°C/W 1 PD 0.1 Single Pulse Ton T Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0 : Sep 2012 www.aosmd.com Page 8 of 10 100 100 80 80 Current rating ID(A) Power Dissipation (W) AON6970 60 40 20 60 40 20 0 0 0 25 50 75 100 125 150 0 TCASE (° °C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=67°C/W 0.1 PD 0.01 Single Pulse 0.001 Q2-CHANNEL: TYPICAL ELECTRICAL 0.00001 0.0001 0.001 Ton AND THERMAL CHARACTERISTICS 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev0 : Sep 2012 www.aosmd.com Page 9 of 10 AON6970 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev0 : Sep 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 10 of 10