AOSMD AON7244

AON7244
60V N-Channel MOSFET
General Description
Product Summary
The AON7244 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
60V
50A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 8.5mΩ
RDS(ON) (at VGS = 4.5V)
< 12mΩ
100% UIS Tested
100% Rg Tested
Top View
DFN 3.3x3.3 EP
Bottom View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
V
A
160
20
IDSM
TA=70°C
±20
39
IDM
TA=25°C
Units
V
50
ID
TC=100°C
C
Maximum
60
A
16
Avalanche Current C
IAS, IAR
40
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
80
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: July 2011
6.2
Steady-State
Steady-State
RθJA
RθJC
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W
4
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
TC=100°C
-55 to 150
Typ
16
45
1.1
°C
Max
20
55
1.5
Units
°C/W
°C/W
°C/W
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AON7244
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
160
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=16A
100
nA
2
2.5
V
7
8.5
12
15
9
12
mΩ
1
V
50
A
A
gFS
Forward Transconductance
VDS=5V, ID=20A
100
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
µA
5
IGSS
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
60
VDS=60V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
S
1625
2030
2435
pF
150
215
280
pF
2.5
8.5
14.5
pF
0.4
0.8
1.2
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
20
26
32
nC
Qg(4.5V) Total Gate Charge
9
11.5
14
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=30V, ID=20A
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
6.5
nC
2.5
nC
7.5
ns
2.5
ns
24.5
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
12
18
24
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
45
68
90
1.5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: July 2011
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Page 2 of 6
AON7244
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
VDS=5V
4V
80
80
4.5V
60
ID(A)
ID (A)
60
3.5V
40
40
20
20
VGS=3V
0
0
1
2
3
4
125°C
25°C
0
1
5
14
3
4
5
Normalized On-Resistance
2
12
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
10
8
6
VGS=10V
4
2
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
=4.5V
1.4
1.2
VGS
ID=16A
1
0.8
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
20
1.0E+02
ID=20A
1.0E+01
1.0E+00
IS (A)
15
RDS(ON) (mΩ
Ω)
40
125°C
10
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
5
25°C
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: July 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7244
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2400
VDS=30V
ID=20A
2000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
1600
1200
800
Coss
400
Crss
0
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
60
200
1000.0
RDS(ON)
100µs
10.0
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
160
10µs
Power (W)
10µs
100.0
ID (Amps)
10
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=1.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: July 2011
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Page 4 of 6
AON7244
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
TA=125°C
10
1
80
60
40
20
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
25
50
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
10000
60
TA=25°C
50
1000
40
Power (W)
Current rating ID(A)
150
30
100
20
10
10
1
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
150
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: July 2011
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Page 5 of 6
AON7244
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: July 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6