AOSMD AON7444

AON7444
60V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AON7444 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
VDS
60V
33A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 22mΩ
RDS(ON) (at VGS=4.5V)
< 26mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Top View
D
Top View
Bottom
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 2: Mar. 2011
IAS, IAR
30
A
EAS, EAR
45
mJ
42
Steady-State
Steady-State
W
17
3.1
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
A
7
PDSM
Junction and Storage Temperature Range
A
9
PD
TA=25°C
V
75
IDSM
TA=70°C
±20
21
IDM
TA=25°C
Continuous Drain
Current
Avalanche Current
C
Units
V
33
ID
TC=100°C
Maximum
60
-55 to 150
Typ
30
60
2.5
°C
Max
40
75
3
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON7444
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Typ
60
10
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
75
TJ=55°C
50
VDS=0V, VGS= ±20V
±100
VGS=10V, ID=9A
2
18
22
28
34
20.5
26
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=9A
45
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
VGS=4.5V, ID=8A
Maximum Body-Diode Continuous Current
G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
2.6
µA
nA
V
A
RDS(ON)
TJ=125°C
Units
V
VDS=60V, VGS=0V
IDSS
IS
Max
mΩ
mΩ
S
1
V
40
A
pF
1340
1680
2000
100
150
195
pF
35
60
85
pF
0.4
0.9
1.4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
22
28
34
nC
Qg(4.5V) Total Gate Charge
10
13
16
nC
5.5
6.9
8.3
nC
2
3.7
5
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=9A
VGS=10V, VDS=30V, RL=3.3Ω,
RGEN=3Ω
IF=9A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/µs
6
ns
2.4
ns
24
ns
2.7
ns
9
13
17
24
34
44
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Mar. 2011
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Page 2 of 7
AON7444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
80
10V
4.5V
VDS=5V
6V
40
60
4V
ID(A)
ID (A)
30
40
20
3.5V
20
VGS=3V
0
0
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1
5
1.5
2
2.5
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
Normalized On-Resistance
1.8
25
VGS=4.5V
20
VGS=10V
15
VGS=10V
ID=9A
1.6
1.4
17
VGS=4.5V
5
ID=8A
1.2
2
10
1
0.8
10
0
5
0
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
10
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
45
1.0E+02
ID=9A
40
1.0E+01
40
35
1.0E+00
125°C
30
IS (A)
RDS(ON) (mΩ )
25°C
0
1
30
RDS(ON) (mΩ )
125°C
10
25
1.0E-02
20
1.0E-03
15
125°C
1.0E-01
25°C
1.0E-04
25°C
10
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Mar. 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AON7444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
10
VDS=30V
ID=9A
2000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
1600
1200
800
400
Coss
Crss
0
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
60
200
1000
10µs
100
10µs
RDS(ON)
limited
10
1
DC
100µs
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.1
0.1
17
5
2
10
120
80
40
0.01
0.01
TJ(Max)=150°C
TC=25°C
160
Power (W)
ID (Amps)
10
1
10
VDS (Volts)
100
1000
0
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Mar. 2011
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Page 4 of 7
AON7444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
IAR (A) Peak Avalanche Current
50
Power Dissipation (W)
TA=25°C
TA=100°C
TA=150°C
TA=125°C
40
30
20
10
0
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
40
10000
30
1000
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
Power (W)
Current rating ID(A)
TA=25°C
20
17
5
2
10
100
10
10
1
0.00001
0
0
25
50
75
100
125
150
0.001
0.1
10 0
1000
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2: Mar. 2011
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Page 5 of 7
AON7444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
75
20
20
3
di/dt=800A/µs
125ºC
60
2.5
16
125ºC
2
Qrr
30
12
trr (ns)
25ºC
Irm (A)
Qrr (nC)
15
45
1.5
25ºC
trr
8
10
1
125ºC
15
25ºC
4
Irm
0
0
5
10
15
20
5
25
125ºC
0
30
0
IS (A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
0
10
15
20
25
30
25
2.5
125ºC
Is=20A
5
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
25
70
60
0.5
S
25ºC
S
di/dt=800A/µs
Is=20A
125ºC
20
20
15
15
2
30
Qrr
10
125ºC
1.5
25ºC
trr
S
trr (ns)
25ºC
40
Irm (A)
Qrr (nC)
50
10
1
25ºC
20
10
5
25ºC
Irm
0.5
S
125º
0
0
0
5
200
400
600
800
1000
0
0
0
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 2: Mar. 2011
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200
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 6 of 7
AON7444
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 2: Mar. 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7