AOSMD AOT11N60

AOT11N60/AOTF11N60
600V,11A N-Channel MOSFET
General Description
Product Summary
The AOT11N60 & AOTF11N60 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new
and existing offline power supply designs.
VDS
ID (at VGS=10V)
[email protected]
11A
RDS(ON) (at VGS=10V)
< 0.65Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT11N60L & AOTF11N60L
Top View
TO-220
TO-220F
D
G
AOT11N60
G
D
S
G
AOTF11N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
AOT11N60
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Pulsed Drain Current
TC=100°C
C
ID
S
S
AOTF11N60
600
AOTF11N60L
±30
VGS
TC=25°C
Continuous Drain
Current
D
11
8
Units
V
V
11*
11*
8*
8*
A
IDM
39
Avalanche Current C
IAR
4.8
A
Repetitive avalanche energy C
EAR
345
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
EAS
dv/dt
690
5
50
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
TJ, TSTG
PD
2.2
TL
Symbol
RθJA
RθCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev 0: Jan 2012
272
0.4
-55 to 150
37.9
0.3
300
mJ
V/ns
W
W/ oC
°C
°C
AOT11N60
65
AOTF11N60
65
AOTF11N60L
65
Units
°C/W
0.5
0.46
-2.5
-3.3
°C/W
°C/W
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Page 1 of 6
AOT11N60/AOTF11N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
ID=250µA, VGS=0V, TJ=150°C
700
V
ID=250µA, VGS=0V
0.67
V/ oC
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
±100
3.3
µA
3.9
4.5
nΑ
V
0.65
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.5A
0.56
gFS
Forward Transconductance
VDS=40V, ID=5.5A
12
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
11
A
ISM
Maximum Body-Diode Pulsed Current
39
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
Gate Source Charge
S
0.73
1320
1656
1990
pF
100
146
195
pF
6.5
11.2
16
pF
1.7
3.5
5.3
Ω
24
30.6
37
VGS=10V, VDS=480V, ID=11A
nC
9.6
nC
Qgd
Gate Drain Charge
9.6
nC
tD(on)
Turn-On DelayTime
39
ns
tr
Turn-On Rise Time
58
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=11A,dI/dt=100A/µs,VDS=100V
400
500
600
Qrr
Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V
4.7
5.9
7.1
Body Diode Reverse Recovery Time
VGS=10V, VDS=300V, ID=11A,
RG=25Ω
92
ns
42
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.8A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Jan 2012
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Page 2 of 6
AOT11N60/AOTF11N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
100
10V
-55°C
VDS=40V
6.5V
16
10
ID(A)
ID (A)
12
6V
125°C
8
1
4
25°C
VGS=5.5V
0
0.1
0
5
10
15
20
25
30
2
4
VDS (Volts)
Fig 1: On-Region Characteristics
1.4
8
10
Normalized On-Resistance
3
1.2
RDS(ON) (Ω
Ω)
6
VGS(Volts)
Figure 2: Transfer Characteristics
1.0
0.8
VGS=10V
0.6
2.5
VGS=10V
ID=5.5A
2
1.5
1
0.5
0
0.4
0
4
-100
8
12
16
20
24
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.2
40
1.0E+00
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
0.9
1.0E-04
1.0E-05
0.8
-100
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
Rev0: Jan 2012
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT11N60/AOTF11N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=480V
ID=11A
12
Ciss
Capacitance (pF)
VGS (Volts)
1000
9
6
Coss
100
10
3
Crss
1
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
50
100
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100
10µs
10µs
RDS(ON)
limited
10
1ms
DC
0.1
TJ(Max)=150°C
TC=25°C
ID (Amps)
ID (Amps)
100µs
1
1ms
1
10ms
TJ(Max)=150°C
TC=25°C
0.1
0.01
100µs
RDS(ON)
limited
10
DC
0.01
1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT11N60 (Note F)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOTF11N60 (Note F)
100
12
10µs
100µs
1ms
1
10ms
TJ(Max)=150°C
TC=25°C
0.1
DC
0.1s
1s
10
Current rating ID(A)
RDS(ON)
limited
10
ID (Amps)
0.1s
1s
8
6
4
2
0
0.01
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe Operating Area
for AOTF11N60L (Note F)
Rev0: Jan 2012
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0
25
50
75
100
125
150
TCASE (°C)
Figure 12: Current De-rating (Note B)
Page 4 of 6
AOT11N60/AOTF11N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.46°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Ton
0.01
T
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT11N60(Note F)
1
10
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF11N60 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF11N60 (Note F)
Rev0: Jan 2012
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Page 5 of 6
AOT11N60/AOTF11N60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev0: Jan 2012
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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Page 6 of 6