AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary The AOT2606L & AOB2606L & AOTF2606L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 60V 72A RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D D G G AOT2606L D S AOTF2606L G D S VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current V 38 A 260 13 IDSM TA=70°C Units V 54 56 IDM TA=25°C AOTF2606L G ±20 72 ID TC=100°C C S AOB2606L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT2606L/AOB2606L VDS Drain-Source Voltage 60 Gate-Source Voltage S A 10 Avalanche Current C IAS 60 A Avalanche energy L=0.1mH C EAS 180 mJ TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C 36.5 18 2.1 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 115 57.5 Symbol t ≤ 10s Steady-State Steady-State W 1.3 TJ, TSTG RθJA RθJC -55 to 175 AOT2606L/AOB2606L 15 60 1.3 W °C AOTF2606L 15 60 4.1 Units °C/W °C/W °C/W * Surface mount package TO263 Rev 1 : Mar. 2012 www.aosmd.com Page 1 of 7 AOT2606L/AOB2606L/AOTF2606L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 260 VGS=10V, ID=20A TJ=125°C VGS=10V, ID=20A gFS Forward Transconductance TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V µA 5 IGSS TO220/TO220F Units 1 TJ=55°C Static Drain-Source On-Resistance Max 60 VDS=60V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=30V, f=1MHz ±100 nA 3 3.5 V 5.4 6.5 8.5 10.5 5.1 6.2 mΩ 1 V 72 A A 75 0.7 mΩ S 4050 pF 345 pF 16.8 pF 0.65 1.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 53 75 nC Qg(4.5V) Total Gate Charge 22 31 nC Qgs Gate Source Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=20A 0.3 17 nC Qgd Gate Drain Charge 5 nC tD(on) Turn-On DelayTime 18 ns tr Turn-On Rise Time 20 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 33 ns 4 ns IF=20A, dI/dt=500A/µs 26 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 125 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1 : Mar. 2012 www.aosmd.com Page 2 of 7 AOT2606L/AOB2606L/AOTF2606L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V VDS=5V 6V 100 80 5V 80 ID(A) ID (A) 60 60 40 40 125°C 4.5V 20 20 25°C Vgs=4V 0 0 0 1 2 3 4 2 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 Normalized On-Resistance 2 8 RDS(ON) (mΩ Ω) 3 VGS=10V 6 4 2 1.8 VGS=10V ID=20A 1.6 17 5 2 10 1.4 1.2 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 14 1.0E+02 ID=20A 1.0E+01 12 40 1.0E+00 8 IS (A) RDS(ON) (mΩ Ω) 10 125°C 125°C 1.0E-01 1.0E-02 6 25°C 1.0E-03 4 1.0E-04 25°C 1.0E-05 2 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1 : Mar. 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT2606L/AOB2606L/AOTF2606L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=30V ID=20A Ciss 4000 Capacitance (pF) VGS (Volts) 8 6 4 3000 2000 Coss 2 1000 0 0 Crss 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 60 0 60 1000 1000.0 10µs 10µs 100µs RDS(ON) 10.0 1ms 10ms 1.0 DC TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 800 Power (W) 100.0 ID (Amps) 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 17 5 2 10 600 400 200 0.0 0 0.01 0.1 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT2606L and AOB2606L (Note F) 0.0001 0.001 0.01 0.1 1 10 0 100 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case for AOT2606L and AOB2606L (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.3°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2606L and AOB2606L (Note F) Rev 1 : Mar. 2012 www.aosmd.com Page 4 of 7 AOT2606L/AOB2606L/AOTF2606L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 1000.0 10µs RDS(ON) 800 100µs 10.0 Power (W) ID (Amps) 100.0 1ms 10ms 1.0 DC TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 600 400 200 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 10 100 17 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case 5 for AOTF2606L (Note F) Figure 9: Maximum Forward Biased Safe Operating Area for AOTF2606L 2 10 Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4.1°C/W 0 18 0.1 PD Single Pulse 0.01 Ton 0.001 1E-05 T 40 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2606L (Note F) Rev 1 : Mar. 2012 www.aosmd.com Page 5 of 7 AOT2606L/AOB2606L/AOTF2606L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C TA=100°C 100 TA=150°C 100 50 TA=125°C 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 80 10000 60 1000 25 50 75 100 125 150 175 TCASE (° °C) Figure 13: Power De-rating for AOT2606L and AOB2606L (Note F) Power (W) Current rating ID(A) TA=25°C 40 17 5 2 10 100 20 10 0 1 0 25 0.001 0.1 10 0 1000 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 50 75 100 125 150 175 TCASE (° °C) Figure 14: Current De-rating for AOT2606L and AOB2606L (Note F) 1E-05 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1 : Mar. 2012 www.aosmd.com Page 6 of 7 AOT2606L/AOB2606L/AOTF2606L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1 : Mar. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7