AOT480L/AOB480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L & AOB480L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 80V ID (at VGS=10V) 180A RDS(ON) (at VGS=10V) < 4.5mΩ RDS(ON) (at VGS = 7V) < 5.5mΩ 100% UIS Tested 100% Rg Tested TO220 Top View Bottom View Top View TO-263 D2PAK Bottom View D D D D D G G D S S D G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev1: April 2010 Steady-State Steady-State A A IAS,IAR 90 A EAS,EAR 405 mJ 333 W 167 1.9 RθJA RθJC www.aosmd.com W 1.2 TJ, TSTG Symbol t ≤ 10s V 12 PDSM Junction and Storage Temperature Range ±25 15 PD TA=25°C Units V 500 IDSM TA=70°C Maximum 80 134 IDM TA=25°C Continuous Drain Current S S 180 ID TC=100°C G -55 to 175 Typ 12 54 0.35 °C Max 15 65 0.45 Units °C/W °C/W °C/W Page 1 of 7 AOT480L/AOB480L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Min ID=250µA, VGS=0V Typ 80 10 TJ=55°C 50 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=5V ,ID=250µA 2 ID(ON) On state drain current VGS=10V, VDS=5V 500 Units V VDS=80V, VGS=0V Zero Gate Voltage Drain Current Max µA 100 nA 2.8 4 V 3.7 4.5 6.1 7.3 VGS=7V, ID=20A TO220 4.2 5.5 VGS=10V, ID=20A TO263 3.4 4.2 3.9 60 5.2 Forward Transconductance VGS=7V, ID=20A TO263 VDS=5V, ID=20A mΩ S VSD Diode Forward Voltage IS=1A,VGS=0V 0.6 IS Maximum Body-Diode Continuous Current VGS=10V, ID=20A TO220 RDS(ON) gFS Static Drain-Source On-Resistance TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs VGS=10V, VDS=40V, ID=20A Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime A mΩ mΩ mΩ 1 V 180 A 5200 6520 7820 pF 570 810 1060 pF 185 310 430 pF 0.3 0.64 1 Ω 92 116 140 nC 24 30 36 nC 38 53 nC 23 VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω 31.5 ns 33 ns 46 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 20 17.5 28 36 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 90 132 170 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. The maximum current limited by package is 120A. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: April 2010 www.aosmd.com Page 2 of 7 AOT480L/AOB480L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 180 VDS=5V 6.5V 10V 6V 150 7V 160 120 ID(A) ID (A) 120 5.5V 90 80 60 5V 40 25°C 125°C 30 VGS=4.5V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 5 4 5 6 7 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 7 Normalized On-Resistance 2.2 6 RDS(ON) (mΩ ) 3 VGS=7V 5 4 VGS=10V 3 2 VGS=10V ID=20A 1.8 17 5 2 10 VGS=7V 1.6 1.4 1.2 ID=20A 1 0.8 2 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 9 1.0E+02 ID=20A 8 1.0E+01 7 1.0E+00 125°C IS (A) RDS(ON) (mΩ ) 40 6 125°C 25°C 1.0E-01 1.0E-02 5 25°C 1.0E-03 4 1.0E-04 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev1: April 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT480L/AOB480L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 9000 10 VDS=20V ID=20A 8000 Ciss 7000 Capacitance (pF) VGS (Volts) 8 6 4 6000 5000 4000 3000 2000 2 Coss Crss 1000 0 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 0 120 20 40 60 VDS (Volts) Figure 8: Capacitance Characteristics 80 5000 1000.0 10µs RDS(ON) limited 10µs 1ms 10ms 10.0 DC 1.0 4000 100µs Power (W) ID (Amps) 100.0 TJ(Max)=175°C TC=25°C 0.1 2000 1000 0 0.01 0.1 1 10 VDS (Volts) 100 1000 1E-05 0.0001 0.001 Zθ JC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 17 5 2 10 3000 0.0 10 TJ(Max)=175°C TC=25°C In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=0.45°C/W 40 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev1: April 2010 www.aosmd.com Page 4 of 7 AOT480L/AOB480L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS IAR (A) Peak Avalanche Current 1000.0 360 Power Dissipation (W) 320 TA=25°C TA=100°C 100.0 TA=150°C TA=125°C 280 240 200 160 120 80 40 0 10.0 0 1 10 100 1000 µs) Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 1000 200 TA=25°C 160 120 Power (W) Current rating ID(A) 25 80 100 17 5 2 10 10 40 0 0 25 50 75 100 125 150 175 Zθ JA Normalized Transient Thermal Resistance 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 1 0.0001 1 100 0 10000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) 40 RθJA=65°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev1: April 2010 www.aosmd.com Page 5 of 7 AOT480L/AOB480L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 240 50 125ºC di/dt=800A/µs 36 42 200 125ºC 28 26 Irm (A) 25ºC 160 Irm 120 25ºC 20 25ºC S 0.5 12 10 25ºC 80 5 10 15 20 25 125ºC 8 2 0 trr 16 18 125ºC 1 24 trr (ns) Qrr 4 30 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 240 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 40 50 2 Is=20A Is=20A 125ºC 200 125ºC 40 30 1.5 160 125ºC Qrr 80 20 trr 25ºC Irm 0.5 125º 0 200 400 600 800 1000 0 0 0 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev1: April 2010 S 10 0 0 1 20 10 25ºC 40 30 S 25ºC 120 trr (ns) 25ºC Irm (A) Qrr (nC) S 34 Qrr (nC) 1.5 di/dt=800A/µs 32 www.aosmd.com 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AOT480L/AOB480L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev1: April 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7