AOTF20N40 400V,20A N-Channel MOSFET General Description Product Summary The AOTF20N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 500@150℃ 20A RDS(ON) (at VGS=10V) < 0.25Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOTF20N40L Top View D TO-220F G G AOTF20N40 D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOTF20N40 AOTF20N40L Symbol Drain-Source Voltage VDS 400 Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ±30 V 20* ID Units V 20* 13* 13* A Pulsed Drain Current C IDM Avalanche Current C IAR 6 A Repetitive avalanche energy C EAR 540 mJ 1080 5 mJ V/ns W Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC TJ, TSTG Junction and Storage Temperature Range Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev0: May 2012 54 50 40 0.4 0.3 -55 to 150 W/ oC °C 300 °C AOTF20N40 65 2.5 www.aosmd.com AOTF20N40L 65 3.1 Units °C/W °C/W Page 1 of 6 AOTF20N40 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 400 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 500 V ID=250µA, VGS=0V 0.4 V/ oC VDS=400V, VGS=0V 1 VDS=320V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A gFS Forward Transconductance VDS=40V, ID=10A 20 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 ±100 3.0 µA 3.7 4.3 nΑ V 0.2 0.25 Ω 1 V S IS Maximum Body-Diode Continuous Current 20 A ISM Maximum Body-Diode Pulsed Current 54 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1510 1898 2290 pF VGS=0V, VDS=25V, f=1MHz 145 212 290 pF 9 15 21 pF VGS=0V, VDS=0V, f=1MHz 1.5 3 4.5 Ω 28 37 45 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=320V, ID=20A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time VGS=10V, VDS=200V, ID=20A, RG=25Ω 12 nC 12 nC 44 ns 87 ns 96 ns 59 IF=20A,dI/dt=100A/µs,VDS=100V ns 220 285 345 3 3.9 4.8 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=6A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: May 2012 www.aosmd.com Page 2 of 6 AOTF20N40 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 50 -55°C 10V VDS=40V 40 6.5V 10 ID(A) ID (A) 30 6V 125°C 20 1 5.5V 10 25°C VGS=5V 0 0.1 0 5 10 15 20 25 VDS (Volts) Fig 1: On-Region Characteristics 30 2 6 8 VGS(Volts) Figure 2: Transfer Characteristics 10 3 0.8 Normalized On-Resistance 1.0 RDS(ON) (Ω Ω) 4 VGS=10V 0.6 0.4 0.2 VGS=10V ID=10A 2.5 2 1.5 1 0.5 0.0 0 0 8 16 24 32 40 -100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 1.2 1E+0040 IS (A) BVDSS (Normalized) 1E+01 1.1 1 125°C 1E-01 25°C 1E-02 0.9 1E-03 0.8 1E-04 -100 -50 0 50 100 150 200 TJ (°°C) Figure 5:Break Down vs. Junction Temparature Rev0: May 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.0 Page 3 of 6 AOTF20N40 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 1000 Capacitance (pF) VGS (Volts) Ciss VDS=320V ID=20A 12 9 6 Coss 100 Crss 10 3 1 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 60 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 10µs 10µs RDS(ON) limited 10 1ms 1 10ms DC 0.1s 1s 0.1 RDS(ON) limited 10 100µs ID (Amps) ID (Amps) 100 100µs 1ms 1 10ms DC 0.1s 1s 0.1 TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOTF20N40 (Note F) 1 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF20N40L (Note F) Current rating ID(A) 25 20 15 10 5 0 0 25 50 75 100 125 150 TCASE (°°C) Figure 11: Current De-rating (Note B) Rev0: May 2012 www.aosmd.com Page 4 of 6 AOTF20N40 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOTF20N40 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.1°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF20N40L (Note F) Rev0: May 2012 www.aosmd.com Page 5 of 6 AOTF20N40 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev0: May 2012 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6