AOSMD AOTF450L

AOS Semiconductor
Product Reliability Report
AOTF450L,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
1
This AOS product reliability report summarizes the qualification result for AOTF450L. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOTF450L passes AOS quality
and reliability requirements. The released product will be categorized by the process family and
be monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AOTF450L is fabricated using an advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in popular AC-DC applications. By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply designs. This device is ideal for boost
converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED
backlighting.
-RoHS Compliant
-Halogen Free
Details refer to the datasheet.
II. Die / Package Information:
AOTF450L
Standard sub-micron
Middle voltage N channel process
Package Type
3 leads TO220F
Lead Frame
Bare Cu
Die Attach
Soft solder
Bond wire
Al wire
Mold Material
Epoxy resin with silica filler
Moisture Level
Up to Level 1 *
Note * based on info provided by assembler and mold compound supplier
Process
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III. Result of Reliability Stress for AOTF450L
Test Item
Test Condition
Time
Point
MSL
Precondition
168hr 85°c
/85%RH +3 cycle
reflow@250°c
Temp = 150°c ,
Vgs=100% of
Vgsmax
-
HTGB
HTRB
Temp = 150°c ,
Vds=80% of
Vdsmax
HAST
Pressure Pot
Temperature
Cycle
Lot
Attribution
11 lots
168hrs
500 hrs
1000 hrs
168hrs
500 hrs
1000 hrs
1 lot
(Note A*)
Total
Sample size
Number
of
Failures
1815pcs
0
JESD22A113
77pcs
0
JESD22A108
0
JESD22A108
275pcs
0
JESD22A110
0
JESD22A102
0
JESD22A104
77 pcs / lot
77pcs
1 lot
(Note A*)
77 pcs / lot
130 +/- 2°c ,
85%RH,
33.3 psi, Vgs =
100% of Vgs max
121°c , 29.7psi,
RH=100%
100 hrs
5 lots
96 hrs
(Note A*)
11 lots
55 pcs / lot
847pcs
(Note A*)
77 pcs / lot
-65°c to 150°c ,
air to air,
250 / 500
cycles
9 lots
(Note A*)
Reference
Standard
693pcs
77 pcs / lot
Note A: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 23
MTTF = 4957 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOTF450L). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
2
9
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10
9
7
MTTF = 10 / FIT = 4.34 x 10 hrs = 4957 years
/ [2x2x77x1000x258] = 23
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
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Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
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