AOW29S50 500V 29A α MOS TM Power Transistor General Description Product Summary The AOW29S50 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 600V IDM 120A RDS(ON),max 0.15Ω Qg,typ 26.6nC Eoss @ 400V 6.3µJ 100% UIS Tested 100% Rg Tested TO-262 D Bottom View Top View G G D S S D G S AOW29S50 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C AOW29S50 500 Units V ±30 V 29 ID 18 A Pulsed Drain Current C IDM Avalanche Current C IAR 6 A Repetitive avalanche energy C EAR 70 mJ Single pulsed avalanche energy G TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range EAS 608 mJ 120 PD dv/dt TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA Maximum Case-to-sink A Maximum Junction-to-Case Rev 0: April 2012 RθCS RθJC www.aosmd.com 357 W 2.9 100 20 -55 to 150 W/ oC 300 °C AOW29S50 Units V/ns °C 65 °C/W 0.5 0.35 °C/W °C/W Page 1 of 6 AOW29S50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250µA, VGS=0V, TJ=25°C 500 - - ID=250µA, VGS=0V, TJ=150°C 550 600 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=500V, VGS=0V - - 1 VDS=400V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.6 3.3 3.9 nΑ V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM VGS=10V, ID=14.5A, TJ=25°C - 0.13 0.15 Ω VGS=10V, ID=14.5A, TJ=150°C - 0.34 0.4 Ω IS=14.5A,VGS=0V, TJ=25°C - 0.85 - V Maximum Body-Diode Continuous Current - - 29 A Maximum Body-Diode Pulsed Current - - 120 A - 1312 - pF - 88 - pF - 78 - pF - 227 - pF VGS=0V, VDS=100V, f=1MHz - 2.5 - pF VGS=0V, VDS=0V, f=1MHz - 4.8 - Ω - 26.6 - nC - 6.2 - nC DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 400V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=400V, ID=14.5A Qgs Gate Source Charge Qgd Gate Drain Charge - 9.2 - nC tD(on) Turn-On DelayTime - 28 - ns tr Turn-On Rise Time - 39 - ns tD(off) Turn-Off DelayTime - 103 - ns tf trr Turn-Off Fall Time - 40 - ns VGS=10V, VDS=400V, ID=14.5A, RG=25Ω IF=14.5A,dI/dt=100A/µs,VDS=400V - 387 - ns IF=14.5A,dI/dt=100A/µs,VDS=400V - 29.6 - Body Diode Reverse Recovery Charge IF=14.5A,dI/dt=100A/µs,VDS=400V - 7.3 - A µC Irm Body Diode Reverse Recovery Time Peak Reverse Recovery Current Qrr A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=4.5A, VDD=150V, Starting TJ=25°C H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: April 2012 www.aosmd.com Page 2 of 6 AOW29S50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 55 10V 50 45 7V 40 35 30 5.5V 20 5.5V 15 20 15 6V 25 6V 25 7V 30 ID (A) ID (A) 10V 35 10 5V 10 5V 5 VGS=4.5V VGS=4.5V 5 0 0 0 5 10 15 0 20 5 10 15 20 VDS (Volts) Figure 2: On-Region Characteristics@125°C VDS (Volts) Figure 1: On-Region Characteristics@25°C 0.5 1000 VDS=20V -55°C 0.4 100 RDS(ON) (Ω ) 125°C ID(A) 10 1 25°C 0.3 VGS=10V 0.2 0.1 0.1 0.0 0.01 2 4 6 8 0 10 20 30 40 50 60 ID (A) Figure 4: On-Resistance vs. Drain Current and Gate Voltage VGS(Volts) Figure 3: Transfer Characteristics 1.2 3 2.5 VGS=10V ID=14.5A BVDSS (Normalized) Normalized On-Resistance 10 2 1.5 1 1.1 1 0.9 0.5 0 -100 -50 0 50 100 150 200 Temperature (°C) Figure 5: On-Resistance vs. Junction Temperature Rev 0: April 2012 www.aosmd.com 0.8 -100 -50 0 50 100 150 200 TJ (oC) Figure 6: Break Down vs. Junction Temperature Page 3 of 6 AOW29S50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1.0E+02 1.0E+01 125°C 12 VDS=480V ID=14.5A 25°C 1.0E-01 VGS (Volts) IS (A) 1.0E+00 1.0E-02 9 6 1.0E-03 3 1.0E-04 1.0E-05 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 7: Body-Diode Characteristics (Note E) 0 5 10 15 20 25 30 35 40 Qg (nC) Figure 8: Gate-Charge Characteristics 10000 10 8 1000 Eoss(uJ) Capacitance (pF) Ciss Coss 100 Eoss 6 4 Crss 10 2 0 1 0 100 200 300 400 VDS (Volts) Figure 9: Capacitance Characteristics 500 0 100 200 300 VDS (Volts) Figure 10: Coss stroed Energy 400 500 1000 ID (Amps) 100 10µs RDS(ON) limited 10 100µs 1ms 1 10ms DC 0.1 TJ(Max)=150°C TC=25°C 0.01 1 10 100 1000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOW29S50 (Note F) Rev 0: April 2012 www.aosmd.com Page 4 of 6 AOW29S50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 700 30 600 Current rating ID(A) 25 EAS(mJ) 500 400 300 200 20 15 10 5 100 0 0 25 50 75 100 125 TCASE (°C) Figure 12: Avalanche energy 150 175 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note B) 150 Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.35°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton 0.01 T Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOW29S50 (Note F) Rev 0: April 2012 www.aosmd.com Page 5 of 6 AOW29S50 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev 0: April 2012 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6