AOW410 100V N-Channel MOSFET TM SDMOS General Description Product Summary TM The AOW410 is fabricated with SDMOS trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 100V 150A RDS(ON) (at VGS=10V) < 6.5mΩ RDS(ON) (at VGS= 7V) < 7.5mΩ 100% UIS Tested 100% Rg Tested TO-262 D Bottom View Top View G D S S D G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current TC=25°C Maximum 100 ±25 C 108 IDM TA=25°C A 405 12 IDSM TA=70°C V 150 ID TC=100°C Units V A 10 Avalanche Current C IAS,IAR 50 A Avalanche energy L=0.1mH C EAS,EAR 125 mJ TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev0: July 2010 1.9 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.2 TJ, TSTG Symbol t ≤ 10s W 167 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 333 PD -55 to 175 Typ 12 54 0.35 °C Max 15 65 0.45 Units °C/W °C/W °C/W Page 1 of 7 AOW410 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=100V, VGS=0V 100 Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=5V ,ID=250µA RDS(ON) Static Drain-Source On-Resistance 100 2 TJ=125°C VGS=7V, ID=20A Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge 4 µA nA V A 5.1 6.5 8.8 11 5.8 7.5 mΩ 1 V 70 0.63 mΩ S 150 A 5290 6622 7950 pF 415 594 770 pF 130 215 300 pF VGS=0V, VDS=0V, f=1MHz 0.3 0.64 1 Ω 85 107 129 nC VGS=10V, VDS=50V, ID=20A 23 28.5 34 nC 24 40 56 nC VGS=0V, VDS=50V, f=1MHz Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Qrr 3 405 VGS=10V, ID=20A Units V 50 VGS=10V, VDS=5V gFS Max 10 TJ=55°C IGSS IS Typ VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 28 ns 22 ns 43.5 ns 14.5 ns 19 27 35 124 177 230 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package is 120A. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: July 2010 www.aosmd.com Page 2 of 7 AOW410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 180 10V 6.5V 120 6V VDS=5V 150 7V 120 ID(A) ID (A) 90 90 5.5V 60 60 30 125°C 25°C 30 VGS=5V 0 0 0 1 2 3 4 5 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 Normalized On-Resistance RDS(ON) (mΩ) 6 7 2.4 7 VGS=7V 6 5 VGS=10V 4 3 2.2 VGS=10V ID=20A 2 1.8 17 5 2 10 1.6 1.4 VGS=7V ID=20A 1.2 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 0 Temperature (°C) 18 Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 12 ID=20A 1.0E+01 125°C 10 40 1.0E+00 IS (A) RDS(ON) (mΩ) 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 8 25°C 125°C 1.0E-01 25°C 1.0E-02 6 1.0E-03 4 1.0E-04 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: July 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOW410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 10 VDS=50V ID=20A 8000 Capacitance (pF) VGS (Volts) 8 6 4 2 6000 4000 Coss 2000 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 120 0 RDS(ON) limited 10.0 1ms DC 1.0 10ms TJ(Max)=175°C TC=25°C 0.1 4000 40 50 60 TJ(Max)=175°C TC=25°C 17 5 2 10 3000 2000 0.1 1 10 VDS (Volts) 100 0 0.00001 0.0001 1000 0.001 0.01 0.1 0 1 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 30 1000 0.0 0.01 10 20 5000 10µs 10µs 100µs Power (W) 100.0 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 ID (Amps) Crss 0 0 ZθJC Normalized Transient Thermal Resistance Ciss D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=0.45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0: July 2010 www.aosmd.com Page 4 of 7 AOW410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 300 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000.0 TA=100°C 100.0 TA=150°C 10.0 TA=125°C 250 200 150 100 50 0 1.0 1 0 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 1000 160 Power (W) Current rating ID(A) TA=25°C 120 80 17 5 2 10 10 40 1 0.0001 0 0 25 50 75 100 125 150 10 1 0.01 1 175 100 0 18 10000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=65°C/W 0.1 PD 0.01 0.001 0.01 Single Pulse 0.1 1 Ton 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev0: July 2010 www.aosmd.com Page 5 of 7 AOW410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 35 30 Qrr 200 25 25ºC 125ºC 160 20 25ºC 80 0 di/dt=800A/µs 5 10 15 20 25 25 15 15 10 10 25ºC -1 20 125ºC 10 Irm 25ºC 40 30 125ºC 30 1.5 trr 25ºC 600 800 0 1000 1 20 25ºC 0.5 10 S 125º 0 400 25 2 trr (ns) 20 80 0 di/dt (A/µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev0: July 2010 15 Is=20A 25ºC 200 10 50 Irm (A) 160 0 5 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 30 Qrr 0 125ºC 200 Qrr (nC) 1 125ºC 0 40 Is=20A 40 2 125ºC 20 30 280 120 3 trr IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 240 4 25ºC S Irm 120 5 30 Irm (A) Qrr (nC) 240 40 S 280 40 S 125ºC di/dt=800A/µs trr (ns) 320 www.aosmd.com 0 200 400 600 800 0 1000 di/dt (A/µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AOW410 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev0: July 2010 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 7 of 7