AOW480 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOW480 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 80V ID (at VGS=10V) 180A RDS(ON) (at VGS=10V) < 4.5mΩ RDS(ON) (at VGS = 7V) < 5.5mΩ 100% UIS Tested 100% Rg Tested TO-262 Top View D Bottom View G G D S S D S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev0: July 2011 15 90 A EAS,EAR 405 mJ 333 Steady-State Steady-State W 167 1.9 RθJA RθJC www.aosmd.com W 1.2 TJ, TSTG Symbol t ≤ 10s A IAS,IAR PDSM Junction and Storage Temperature Range A 12 PD TA=25°C V 134 IDSM TA=70°C ±25 500 IDM TA=25°C Continuous Drain Current Units V 180 ID TC=100°C Maximum 80 -55 to 175 Typ 12 54 0.35 °C Max 15 65 0.45 Units °C/W °C/W °C/W Page 1 of 7 AOW480 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ 80 10 TJ=55°C 50 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage VDS=5V ,ID=250µA 2 ID(ON) On state drain current VGS=10V, VDS=5V 500 VGS=10V, ID=20A TJ=125°C Units V VDS=80V, VGS=0V VGS(th) µA 100 nA 2.8 4 V 3.7 4.5 6.1 7.3 5.5 A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 4.2 60 VSD Diode Forward Voltage IS=1A,VGS=0V 0.6 IS Maximum Body-Diode Continuous Current mΩ VGS=7V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS=10V, VDS=40V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Qrr Max mΩ S 1 V 180 A 5200 6520 7820 pF 570 810 1060 pF 185 310 430 pF 0.3 0.64 1 Ω 92 116 140 nC 24 30 36 nC 23 38 53 nC 31.5 VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω ns 33 ns 46 ns 17.5 ns 20 28 36 90 132 170 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current is package limited . H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: July 2011 www.aosmd.com Page 2 of 7 AOW480 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 180 6.5V 10V VDS=5V 6V 150 7V 160 120 ID(A) ID (A) 120 5.5V 90 80 60 5V 40 25°C 125°C 30 VGS=4.5V 0 0 0 1 2 3 4 2 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 5 6 7 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 7 Normalized On-Resistance 2.2 6 RDS(ON) (mΩ Ω) 3 VGS=7V 5 4 VGS=10V 3 2 2 VGS=10V ID=20A 1.8 17 5 2 10 =7V 1.6 1.4 1.2 VGS ID=20A 1 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 9 1.0E+02 ID=20A 8 1.0E+01 7 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 40 6 125°C 25°C 1.0E-01 1.0E-02 5 25°C 4 1.0E-03 1.0E-04 3 4 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: July 2011 5 6 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOW480 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 9000 10 VDS=40V ID=20A 8000 Ciss 7000 Capacitance (pF) VGS (Volts) 8 6 4 6000 5000 4000 3000 2000 2 Coss Crss 1000 0 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 0 120 20 40 60 VDS (Volts) Figure 8: Capacitance Characteristics 80 5000 1000.0 10µs RDS(ON) limited 10µs 100µs 10.0 DC 1.0 4000 1ms 10ms Power (W) ID (Amps) 100.0 TJ(Max)=175°C TC=25°C 0.1 17 5 2 10 3000 2000 1000 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.00001 0.0001 10 1 0.001 0.01 0.1 0 1 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance TJ(Max)=175°C TC=25°C D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.45°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0: July 2011 www.aosmd.com Page 4 of 7 AOW480 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 360 320 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000.0 TA=25°C TA=100°C 100.0 TA=150°C 280 240 200 160 120 TA=125°C 80 40 0 10.0 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 175 1000 200 TA=25°C 160 Power (W) Current rating ID(A) 25 120 80 100 17 5 2 10 10 40 1 0 0 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note F) 0.0001 0.01 1 100 10000 Pulse Width (s) 0 Figure 15: Single Pulse Power Rating18 Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=65°C/W 0.1 PD 0.01 Ton T Single Pulse 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev0: July 2011 www.aosmd.com Page 5 of 7 AOW480 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 240 50 125ºC di/dt=800A/µs 36 42 200 125ºC 28 26 trr (ns) 25ºC Irm 120 10 80 S 5 10 15 20 25 4 30 240 125ºC 10 trr (ns) 20 25ºC 30 1.5 25ºC 30 trr 1 20 25ºC S 10 Irm 0.5 125ºC 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev0: July 2011 25 125ºC 40 Irm (A) Qrr (nC) 25ºC 0 20 2 160 40 15 Is=20A 30 Qrr 10 50 125ºC 120 5 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 40 Is=20A 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 80 0.5 125ºC 8 2 200 25ºC 12 25ºC 0 25ºC 20 16 18 125ºC trr S 160 1 24 Irm (A) Qrr S 34 Qrr (nC) 1.5 di/dt=800A/µs 32 0 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com Page 6 of 7 AOW480 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev0: July 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7