AOSMD AOWF240

AOWF240
40V N-Channel MOSFET
General Description
Product Summary
The AOWF240 uses Trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of RDS(ON)
and Crss.
VDS
ID (at VGS=10V)
40V
83A
RDS(ON) (at VGS=10V)
< 2.6mΩ
RDS(ON) (at VGS=4.5V)
< 3.5mΩ
100% UIS Tested
100% Rg Tested
TO-262F
Top View
D
Bottom View
G
S
G
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
C
V
A
400
21
IDSM
TA=70°C
±20
59
IDM
TA=25°C
Units
V
83
ID
TC=100°C
Maximum
40
A
16
Avalanche Current C
IAS
68
A
Avalanche energy L=0.1mH C
TC=25°C
EAS
231
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0 : Dec. 2011
2.1
Steady-State
Steady-State
RθJA
RθJC
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
W
16.7
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
33.3
PD
TC=100°C
°C
-55 to 175
Typ
11
47
3.7
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Max
15
60
4.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOWF240
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Min
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
Typ
V
VDS=40V, VGS=0V
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
400
TJ=55°C
5
VGS=10V, ID=20A
nA
1.7
2.2
V
2.1
2.6
3.3
4.1
3.5
mΩ
S
1
V
40
A
A
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
2.7
gFS
Forward Transconductance
VDS=5V, ID=20A
78
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
0.65
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=20V, ID=20A
0.5
µA
±100
RDS(ON)
Output Capacitance
Units
40
IDSS
Coss
Max
mΩ
3510
pF
1070
pF
68
pF
1
1.5
Ω
49
72
nC
22
32
nC
9
nC
7
nC
11
ns
10
ns
38
ns
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
11
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
21
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
58
nC
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2011
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Page 2 of 6
AOWF240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
3.5V
VDS=5V
3V
4.5V
80
80
10V
60
ID(A)
ID (A)
60
40
40
125°C
25°C
20
20
VGS=2.5V
0
0
0
1
2
3
4
1
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
RDS(ON) (mΩ
Ω)
2
2.5
3
3.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
4
2
Normalized On-Resistance
8
1.5
4
VGS=4.5V
2
VGS=10V
1.8
VGS=10V
ID=20A
1.6
17
5
2
VGS=4.5V
10
I =20A
1.4
1.2
D
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
8
1.0E+02
ID=20A
1.0E+01
40
1.0E+00
125°C
125°C
4
IS (A)
RDS(ON) (mΩ
Ω)
6
1.0E-01
1.0E-02
25°C
1.0E-03
2
25°C
1.0E-04
1.0E-05
0
0
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Dec. 2011
2
4
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOWF240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
VDS=20V
ID=20A
4000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
3000
2000
Coss
1000
2
Crss
0
0
0
10
20
30
40
0
50
1000.0
10
15
20
25
30
35
40
3000
10µs
RDS(ON)
limited
10µs
100µs
1ms
10ms
10.0
1.0
TJ(Max)=175°C
TC=25°C
2500
DC
TJ(Max)=175°C
TC=25°C
0.1
Power (W)
100.0
ID (Amps)
5
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
2000
17
5
2
10
1500
1000
500
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001 0.001 0.01
0.1
1
10
0100
1000
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=4.5°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
Rev 0 : Dec. 2011
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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100
1000
Page 4 of 6
AOWF240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
TA=100°C
100
40
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=150°C
TA=125°C
30
20
10
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
1000
100
TA=25°C
100
Power (W)
Current rating ID(A)
80
60
40
17
5
2
10
10
20
1
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
0.01
1
100
0
10000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Dec. 2011
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Page 5 of 6
AOWF240
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 0 : Dec. 2011
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6