APOLLOELECTRON BT134-600

TR4A60S
Sensitive Gate Triac
Symbol
Features
◆
◆
○
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
2.T2
▼▲
○
1.T1
3.Gate
○
General Description
This device is suitable for direct coupling to TTL, HTL, CMOS
and application such as various logic functions, low power
AC switching applications, such as fan speed, small light
controllers and home appliance equipment.
This device may substitute for Z0405MF, 2N6075, BT134-600 series.
TO-
1
Absolute Maximum Ratings
Symbol
2
3
( Tj = 25°C unless otherwise specifed )
Parameter
Condition
Since wave, 50 to 60Hz
Ratings
Units
600
V
4.0
A
VDRM
Repetitive Peak Off-State Voltage
IT(RMS)
R.M.S On-State Current
Tj = 125 °C, Full Sine wave
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
25/27
A
I2 t
tp= 10ms
3.1
A2 s
I 2t
PG(AV)
PGM
Average Gate Power Dissipation
Peak Gate Power Dissipation
Tj = 125 °C
Tj=125°C
Tj = 125 °C
0.5
W
5
W
2
A
IGM
Peak Gate Current
TJ
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
TSTG
1/6
July, 2010. Rev. 2
[email protected] Electron Co.,Ltd., All rights reserved.
TR4A60S
Electrical Characteristics
Symbol
2/6
Items
Conditions
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
Tj = 125 °C
VTM
Peak On-State Voltage
ITM = 5.5A, tp=380㎲
Ratings
Min.
Typ.
Max.
---
---
2.0
--
--
1.7
─
─
5
─
-
5
─
-
5
Unit
mA
V
I+GT1
Ⅰ
I -GT1
Ⅱ
I -GT3
Ⅲ
I+GT4
,9 1 0 � � � � �� � � ���
Gate Trigger Current
VD = 12V, RL=30 Ω
V+GT1
Ⅰ
V-GT1
Ⅱ
V GT3
Ⅲ
V+GT4
IV
VGD
Non-Trigger Gate Voltage
Tj = 125 °C, VD=VDRM RL=3.3kΩ
0.25
dv/dt
Critical Rate of Rise Off-State
Voltage
Tj = 125 °C,
VD=2/3 VDRM
20
IH
Holding Current
Gate Trigger Voltage
VD = 12 V, RL=30 Ω
---
---
1.5
---
---
1.5
─
─
1.5
---
It=0.1A
---
----─
---
mA
V
1.5
─
─
10
V
V/㎲
mA
TR4A60S
Fig 1. Gate Characteristics
10
Fig 2. On-State Voltage
2
1
10
VGK = 5V
PGK = 5W
On-State Current [A]
25℃
10
0
IGM=2A
Gate Voltage [V]
PG(AV) = 0.5W
1
10
o
125 C
0
10
o
25 C
VGD = 0.2V
10
10
-1
10
1
10
2
10
Gate Current [mA]
3
-1
0.5
2.0
2.5
3.0
Fig 4. On State Current vs.
Allowable Case Temperature
7
θ
2π
5
360°
4
θ
θ = 180
o
θ = 150
o
θ = 120
o
: Conduction Angle
3
θ = 90
o
θ = 60
o
θ = 30
o
o
π
θ
Allowable Case Temperature [ C]
130
6
Power Dissipation [W]
1.5
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
2
1
0
1.0
0
1
2
3
4
120
110
2π
θ
θ
o
o
θ = 90
o
o
o
θ = 150
o
θ = 180
: Conduction Angle
0
θ = 30
θ = 60
θ = 120
360°
100
5
θ
π
1
2
RMS On-State Current [A]
3
4
5
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
35
10
o
60Hz
15
10
o
20
VGT (25 C)
25
VGT (t C)
Surge On-State Current [A]
30
1
50Hz
5
0
0
10
10
1
10
Time (cycles)
2
10
3
0.1
-50
0
50
100
150
o
Junction Temperature [ C]
3/6
TR4A60S
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
1
10
0
o
IGT (25 C)
o
IGT (t C)
o
Transient Thermal Impedance [ C/W]
10
1
I
+
I
-
I
-
GT1
GT1
GT3
I
0.1
-50
0
50
100
o
Junction Temperature [ C]
4/6
+
GT3
150
10
-1
10
-3
10
-2
10
-1
10
Time (sec)
0
10
1
10
2
TR4A60S
TO-126 Package Dimension
mm
Dim.
Min.
Inch
Typ.
Max.
Min.
Typ.
A
7.5
7.9
0.295
0.311
B
10.8
11.2
0.425
0.441
C
14.2
14.7
0.559
0.579
D
2.7
2.9
0.106
0.114
E
3.8
0.150
F
2.5
0.098
G
1.2
1.5
H
0.047
0.059
2.3
I
0.091
4.6
0.181
J
0.48
0.62
0.019
0.024
K
0.7
0.86
0.028
0.034
L
1.4
0.055
φ
3.2
0.126
D
A
E
B
φ
G
F
L
1
2
C
1. T1
2. T2
3. Gate
3
J
H
I
5/6
Max.
K
TR4A60S
TO-126 Package Dimension, Forming
mm
Dim.
Min.
Inch
Typ.
Max.
Min.
Typ.
A
7.5
7.9
0.295
0.311
B
10.8
11.2
0.425
0.441
C
14.2
14.7
0.559
0.579
D
2.7
2.9
0.106
0.114
E
3.8
0.150
F
2.5
0.098
G
1.2
1.5
H
0.047
0.059
2.3
I
0.091
4.6
0.181
J
0.48
0.62
0.019
0.024
K
0.7
0.86
0.028
0.034
L
1.4
0.055
M
5.0
0.197
φ
3.2
0.126
A
D
E
B
φ
L
G
F
3
2
C
1. Gate
2. T2
3. T1
1
M
J
H
I
6/6
Max.
K