APOLLOELECTRON CP10C60

CP10C60
Standard Gate Silicon Controlled Rectifiers
Symbol
○
TO-220F
2. Anode
BVDRM = 600V
IT(RMS) = 12 A
▼
○
1.Cathode
3.Gate
ITSM = 120A
○
1
2
3
Features
◆
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 12 A )
ISOLATED TYPE
General Description
Apollo Electron’s SCR is suitable for the application where requiring high bidirectional blocking voltage
capability and also suit able for over voltage protection, motor control circuit in power tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings
Symbol
( Tj = 25°C unless otherwise specified )
Parameter
Condition
Ratings
Units
VDRM
Repetitive Peak Off-State Voltage
sine wave,50 to 60Hz
600
V
IT(RMS)
R.M.S On-State Current
180° Conduction Angle
12
A
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
120
A
di/dt
Critical rate of rise of on-state current
Ipk = 20A, IGT =20mA
50
A/us
Forward Average Gate Power Dissipation
Tj=110 °C
0.5
W
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
PG(AV)
TJ
TSTG
1/5
May, 2010, Rev. 1
copyright @ Apollo Electron Co., Ltd. All rights reserved.
CP10C60
Electrical Characteristics
Symbol
Items
Conditions
VD = VDRM
IDRM
Repetitive Peak Off-State
Current
VTM
Peak On-State Voltage (1)
IT = 12 A
IGT
Gate Trigger Current (2)
VD = 12 V, RL=100 Ω
VGT
Gate Trigger Voltage (2)
dv/dt
IH
2/5
( Tj = 25 °C unless otherwise noted )
Ratings
Min.
Typ.
─
--
─
Max.
Unit
2
mA
─
1.7
V
─
─
20
mA
VD = 12 V, RL=100Ω
---
---
1.3
Critical Rate of Rise Off-State
Voltage
Linear slope up to VD = VDRM 67% ,
Gate open
Tj =110°C
20
─
─
V/us
Holding Current
VD=24V, IGT=50mA
30
mA
---
---
V
CP10C60
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
Max. Allowable Case Temperature [ C]
160
1
o
10
PGM(5W)
PG(AV)(0.5W)
0
10
IGM(2A)
Gate Voltage [V]
VGM(5V)
o
25 C
VGD(0.2V)
-1
10
-1
0
10
1
10
2
10
3
10
10
θ = 180
140
o
120
100
π
2π
θ
80
360°
60
40
4
10
θ
0
: Conduction Angl e
1
2
3
4
5
6
7
8
Average On-State Current [A]
Gate Current [mA]
Fig 4. Thermal Response
Fig 3. Typical Forward Voltage
2
1
10
On-State Current [A]
o
Transient Thermal Impedance [ C/W]
10
o
125 C
1
10
o
25 C
0
10
0.5
1.0
1.5
2.0
2.5
3.0
0
10
-1
10
-2
10
-3
10
3.5
On-State Voltage [V]
-5
10
-4
-3
10
10
-2
10
-1
0
10
10
1
10
Time (sec)
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
10
VGT(toC)
o
VGT(25oC)
o
IGT(25 C)
IGT(t C)
10
1
0.1
-50
0
50
100
o
Junction Temperature[ C]
150
1
0.1
-50
0
50
100
150
o
Junction Temperature[ C]
3/5
CP10C60
Fig 7. Typical Holding Current
Fig 8. Power Dissipation
10
10
Max. Average Power Dissipation [W]
o
IH(t C)
IH(25oC)
θ = 180
1
0.1
-50
0
50
100
o
Junction Temperature[ C]
4/5
150
θ = 120
8
θ = 30
θ = 60
o
θ = 90
o
o
o
o
6
4
2
0
0
1
2
3
4
5
Average On-State Current [A]
6
7
CP10C60
TO-220 Package Dimension
D IM
A
A1
A2
b
b2
c
D
e
E
H1
L
L1
￠P
Q
IN C H E S
M IN
M AX
0 .1 4
0 .1 9
0 .0 2
0 .0 5 5
0 .0 8
0 .1 1 5
0 .0 1 5
0 .0 4
0 .0 4 5
0 .0 7
0 .0 1 4
0 .0 2 4
0 .5 6
0 .6 5
0 .0 9 6
0 .1 0 4
0 .3 8
0 .4 2
0 .2 3
0 .2 7
0 .5
0 .5 8
0 .2 5
0 .1 3 9
0 .1 6 1
0 .1
0 .1 3 5
M IL L IM E T E R S
M IN
M AX
3 .5 6
4 .8 3
0 .5 1
1 .4
2 .0 3
2 .9 2
0 .3 8
1 .0 2
1 .1 4
1 .7 8
0 .3 6
0 .6 1
1 4 .2 2
1 6 .5 1
2 .4 4
2 .6 4
9 .6 5
1 0 .6 7
5 .8 4
6 .8 6
1 2 .7
1 4 .7 3
6 .3 5
3 .5 3
4 .0 9
2 .5 4
3 .4 3
5/5