A-POWER AP04N70BI-H-HF

AP04N70BI-H-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
BVDSS
700V
RDS(ON)
2.4Ω
ID
G
4A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-220CFM(I)
The TO-220CFM package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies, DCAC converters and high current high speed switching circuits.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage
+30
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
4
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
2.5
A
15
A
33
W
0.26
W/℃
8
mJ
4
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data & specifications subject to change without notice
1
201008184
AP04N70BI-H-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
700
-
-
V
-
0.6
-
V/℃
VGS=10V, ID=2A
-
-
2.4
Ω
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
3
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
2.5
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=480V,VGS=0V
-
-
500
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=4A
-
16.7
-
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
4.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.9
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
11
-
ns
tr
Rise Time
ID=4A
-
8.3
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
23.8
-
ns
tf
Fall Time
RD=75Ω
-
8.2
-
ns
Ciss
Input Capacitance
VGS=0V
-
950
-
pF
Coss
Output Capacitance
VDS=25V
-
65
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
-
-
4
A
-
-
15
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
1
Tj=25℃, IS=4A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by max. junction temperature
o
2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω , IAS=4A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP04N70BI-H-HF
2
2.5
o
T C =25 C
T C =150 o C
2
1.5
ID , Drain Current (A)
ID , Drain Current (A)
V G =10V
V G =6.0V
V G =5.0V
1.5
V G =4.5V
1
V G =10V
V G =6.0V
V G =5.0V
V G =4.5V
1
0.5
V G =4.0V
0.5
V G =4.0V
V G =3.5V
0
0
0
1
2
3
4
5
6
7
0
V DS , Drain-to-Source Voltage (V)
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
2.4
I D =2A
V G =10V
1.1
Normalized R DS(ON)
Normalized BVDSS (V)
2
1
2
1.6
1.2
0.8
0.9
0.4
0
0.8
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
-50
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP04N70BI-H-HF
40
4.5
4
3.5
3
PD (W)
ID , Drain Current (A)
30
2.5
20
2
1.5
10
1
0.5
0
0
25
50
75
100
T c , Case Temperature (
125
o
0
150
50
100
T c , Case Temperature (
C)
Fig 5. Maximum Drain Current v.s.
150
o
C)
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Normalized Thermal Response (R thjc)
DUTY=0.5
10
ID (A)
100us
1
1ms
10ms
100ms
0.1
1s
DC
T c =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
SINGLE PULSE
T
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
0.001
0.01
1
10
100
1000
V DS (V)
Fig 7. Maximum Safe Operating Area
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
4
AP04N70BI-H-HF
f=1.0MHz
10000
16
I D =4A
12
Ciss
10
V DS =320V
V DS =400V
8
C (pF)
VGS , Gate to Source Voltage (V)
14
V DS =480V
100
Coss
6
4
2
Crss
0
1
0
5
10
15
20
25
1
6
11
16
21
26
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
5
12
10
4
T j =150 o C
VGS(th) (V)
IS (A)
8
T j = 25 o C
6
3
2
4
1
2
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
AP04N70BI-H-HF
VDS
RD
VDS
D
RG
90%
TO THE
OSCILLOSCOPE
0.5x RATED VDS
G
10%
+
S
10 V
VGS
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
10V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
6