A-POWER AP05G120SW-HF

AP05G120SW-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
Features
▼ High Speed Switching
VCES
1200V
▼ Low Saturation Voltage
VCE(sat)[email protected]=5A
▼ CO-PAK, IGBT With FRD
▼ RoHS Compliant & Halogen-Free
IC
10.5A
C
G
C
TO-3P
E
G
Absolute Maximum Ratings
Symbol
E
Parameter
Rating
Units
VCES
Collector-Emitter Voltage
1200
V
VGE
Gate-Emitter Voltage
+30
V
[email protected]=25℃
Collector Current
21
A
[email protected]=100℃
Collector Current
10.5
A
ICM
Pulsed Collector Current
42
A
[email protected]=100℃
Diode Forward Current
6
A
IFM
Diode Pulse Forward Current
40
A
[email protected]=25℃
Maximum Power Dissipation
125
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
TL
Maximum Lead Temp. for Soldering Purposes
300
℃
1
, 1/8" from case for 5 seconds .
Notes:
1.Pulse width limited by max. junction temperature.
Thermal Data
Parameter
Symbol
Value
Units
1
℃/W
Rthj-c(Diode) Thermal Resistance Junction-Case
2
℃/W
Rthj-a
40
℃/W
Rthj-c(IGBT)
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Electrical [email protected] j=25oC(unless otherwise specified)
Symbol
IGES
Parameter
Gate-to-Emitter Leakage Current
Test Conditions
VGE=+30V, VCE=0V
Min.
-
Typ.
-
Max. Units
+500 nA
ICES
Collector-Emitter Leakage Current
VCE=1200V, VGE=0V
-
-
1
mA
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=5A
-
2.3
2.7
V
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
3
-
7
V
Qg
Total Gate Charge
IC=5A
-
33
53
nC
Qge
Gate-Emitter Charge
VCC=600V
-
6.5
-
nC
Qgc
Gate-Collector Charge
-
17.5
-
nC
td(on)
Turn-on Delay Time
-
30
-
ns
tr
Rise Time
-
13
-
ns
td(off)
Turn-off Delay Time
-
130
-
ns
tf
Fall Time
VGE=15V
VCC=960V,
Ic=5A,
VGE=15V,
RG=22Ω,
Inductive Load
-
230
460
ns
Eon
Turn-On Switching Loss
-
0.3
-
mJ
Eoff
Turn-Off Switching Loss
-
0.5
-
mJ
Cies
Input Capacitance
VGE=0V
-
680
1088
pF
Coes
Output Capacitance
VCE=30V
-
65
-
pF
Cres
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
V
Electrical Characteristics of [email protected]=25℃(unless otherwise specified)
VF
Forward Voltage
IF=6A
-
2.6
3
VF
Forward Voltage
IF=20A
-
-
4
V
trr
Reverse Recovery Time
IF=10A
-
54
-
ns
Qrr
Reverse Recovery Charge
di/dt = 100 A/µs
-
138
-
nC
Data and specifications subject to change without notice
1
201210244
AP05G120SW-HF
80
80
20V
18V
15V
IC , Collector Current (A)
60
12V
40
V GE =10V
20
20V
18V
15V
T C =150 o C
IC , Collector Current (A)
o
T C =25 C
60
12V
40
V GE =10V
20
0
0
0
4
8
12
0
16
4
V CE , Collector-Emitter Voltage (V)
8
12
16
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
5
V GE = 15 V
V GE =15V
VCE(sat) ,Saturation Voltage(V)
IC , Collector Current(A)
50
40
T C =25 ℃
T C =150 ℃
30
20
10
4
I C = 20 A
I C =15A
3
2
1
0
0
2
4
6
8
0
10
40
80
120
160
o
Junction Temperature ( C)
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
2
f=1.0MHz
1600
I C =1mA
1.6
Capacitance (pF)
Normalized VGE(th)
1200
1.2
0.8
800
C ies
400
0.4
C oes
C res
0
0
-50
0
50
100
o
Junction Temperature ( C )
Fig 5. Gate Threshold Voltage
150
1
5
9
13
17
21
25
29
33
37
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2
AP05G120SW-HF
1
Normalized Thermal Response (Rthjc)
1000
IC ,Collctor Current(A)
100
10us
10
100us
1
1ms
0.1
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
10ms
0.01
0.01
1
10
100
1000
0.00001
10000
0.0001
0.001
V CE ,Collector - Emitter Voltage(V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 7. SOA Characteristics
Fig 8. Effective Transient Thermal
Impedance
20
20
T C = 150 o C
16
VCE , Collector-Emitter Voltage(V)
VCE , Collector-Emitter Voltage(V)
o
T C =25 C
12
8
I C = 20A
I C =10A
I C =5A
4
0
16
12
8
I C =20A
I C =10A
I C =5A
4
0
0
4
8
12
16
20
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
Fig 10. Saturation Voltage vs. VGE
16
100
VGE , Gate -Emitter Voltage (V)
IF , Forward Current (A)
IC=5A
V CC =600V
10
T j =150 o C
T j =25 o C
1
0.1
12
8
4
0
0
0.8
1.6
2.4
3.2
0
10
20
30
V F , Forward Voltage (V)
Q G , Gate Charge (nC)
Fig11. Forward Characteristic of
Fig 12. Gate Charge Characterisitics
40
Diode
3