AP05G120SW-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES 1200V ▼ Low Saturation Voltage VCE(sat)=2.3V@IC=5A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free IC 10.5A C G C TO-3P E G Absolute Maximum Ratings Symbol E Parameter Rating Units VCES Collector-Emitter Voltage 1200 V VGE Gate-Emitter Voltage +30 V IC@TC=25℃ Collector Current 21 A IC@TC=100℃ Collector Current 10.5 A ICM Pulsed Collector Current 42 A IF@TC=100℃ Diode Forward Current 6 A IFM Diode Pulse Forward Current 40 A PD@TC=25℃ Maximum Power Dissipation 125 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ TL Maximum Lead Temp. for Soldering Purposes 300 ℃ 1 , 1/8" from case for 5 seconds . Notes: 1.Pulse width limited by max. junction temperature. Thermal Data Parameter Symbol Value Units 1 ℃/W Rthj-c(Diode) Thermal Resistance Junction-Case 2 ℃/W Rthj-a 40 ℃/W Rthj-c(IGBT) Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol IGES Parameter Gate-to-Emitter Leakage Current Test Conditions VGE=+30V, VCE=0V Min. - Typ. - Max. Units +500 nA ICES Collector-Emitter Leakage Current VCE=1200V, VGE=0V - - 1 mA VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=5A - 2.3 2.7 V VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA 3 - 7 V Qg Total Gate Charge IC=5A - 33 53 nC Qge Gate-Emitter Charge VCC=600V - 6.5 - nC Qgc Gate-Collector Charge - 17.5 - nC td(on) Turn-on Delay Time - 30 - ns tr Rise Time - 13 - ns td(off) Turn-off Delay Time - 130 - ns tf Fall Time VGE=15V VCC=960V, Ic=5A, VGE=15V, RG=22Ω, Inductive Load - 230 460 ns Eon Turn-On Switching Loss - 0.3 - mJ Eoff Turn-Off Switching Loss - 0.5 - mJ Cies Input Capacitance VGE=0V - 680 1088 pF Coes Output Capacitance VCE=30V - 65 - pF Cres Reverse Transfer Capacitance f=1.0MHz - 10 - pF V Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified) VF Forward Voltage IF=6A - 2.6 3 VF Forward Voltage IF=20A - - 4 V trr Reverse Recovery Time IF=10A - 54 - ns Qrr Reverse Recovery Charge di/dt = 100 A/µs - 138 - nC Data and specifications subject to change without notice 1 201210244 AP05G120SW-HF 80 80 20V 18V 15V IC , Collector Current (A) 60 12V 40 V GE =10V 20 20V 18V 15V T C =150 o C IC , Collector Current (A) o T C =25 C 60 12V 40 V GE =10V 20 0 0 0 4 8 12 0 16 4 V CE , Collector-Emitter Voltage (V) 8 12 16 V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 5 V GE = 15 V V GE =15V VCE(sat) ,Saturation Voltage(V) IC , Collector Current(A) 50 40 T C =25 ℃ T C =150 ℃ 30 20 10 4 I C = 20 A I C =15A 3 2 1 0 0 2 4 6 8 0 10 40 80 120 160 o Junction Temperature ( C) V CE , Collector-Emitter Voltage (V) Fig 3. Typical Saturation Voltage Characteristics Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature 2 f=1.0MHz 1600 I C =1mA 1.6 Capacitance (pF) Normalized VGE(th) 1200 1.2 0.8 800 C ies 400 0.4 C oes C res 0 0 -50 0 50 100 o Junction Temperature ( C ) Fig 5. Gate Threshold Voltage 150 1 5 9 13 17 21 25 29 33 37 V CE , Collector-Emitter Voltage (V) Fig 6. Typical Capacitance Characterisitics v.s. Junction Temperature 2 AP05G120SW-HF 1 Normalized Thermal Response (Rthjc) 1000 IC ,Collctor Current(A) 100 10us 10 100us 1 1ms 0.1 o T c =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 10ms 0.01 0.01 1 10 100 1000 0.00001 10000 0.0001 0.001 V CE ,Collector - Emitter Voltage(V) 0.01 0.1 1 10 t , Pulse Width (s) Fig 7. SOA Characteristics Fig 8. Effective Transient Thermal Impedance 20 20 T C = 150 o C 16 VCE , Collector-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) o T C =25 C 12 8 I C = 20A I C =10A I C =5A 4 0 16 12 8 I C =20A I C =10A I C =5A 4 0 0 4 8 12 16 20 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) V GE , Gate-Emitter Voltage(V) Fig 9. Saturation Voltage vs. VGE Fig 10. Saturation Voltage vs. VGE 16 100 VGE , Gate -Emitter Voltage (V) IF , Forward Current (A) IC=5A V CC =600V 10 T j =150 o C T j =25 o C 1 0.1 12 8 4 0 0 0.8 1.6 2.4 3.2 0 10 20 30 V F , Forward Voltage (V) Q G , Gate Charge (nC) Fig11. Forward Characteristic of Fig 12. Gate Charge Characterisitics 40 Diode 3