A-POWER AP05N50H-HF

AP05N50H-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
BVDSS
500V
RDS(ON)
1.4Ω
ID
5.0A
S
Description
GD
S
TO-252(H)
The AP05N50 provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
5.0
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
2.8
A
18
A
73.5
W
0.59
W/℃
2
W
45
mJ
3
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
[email protected]=25℃
Total Power Dissipation
4
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data & specifications subject to change without notice
4
Value
Unit
1.7
℃/W
62.5
℃/W
1
201008092
AP05N50H-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
3
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
500
-
-
V
VGS=10V, ID=2.7A
-
-
1.4
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2.7A
-
2.4
-
S
IDSS
Drain-Source Leakage Current
VDS=500V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (T j=125 C) VDS=400V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=3.1A
-
19
30
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=400V
-
4.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6.3
-
nC
3
td(on)
Turn-on Delay Time
VDD=250V
-
11
-
ns
tr
Rise Time
ID=3.1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=12Ω,VGS=10V
-
32
-
ns
tf
Fall Time
RD=80.6Ω
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
985
1580
pF
Coss
Output Capacitance
VDS=25V
-
85
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
3.3
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.5
3.8
Ω
Min.
Typ.
Max. Units
Tj=25℃, IS=4.5A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
3
Test Conditions
trr
Reverse Recovery Time
IS=3.1A, VGS=0V,
-
300
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2.6
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω , IAS=3A.
3.Pulse test
2
4.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP05N50H-HF
5
5
o
T C =25 C
4
ID , Drain Current (A)
ID , Drain Current (A)
4
10V
7 .0V
6 .0V
5 .0 V
T C =150 o C
10V
7.0V
6.0V
3
5.0V
2
3
2
V G = 4.0V
1
1
V G =4.0V
0
0
0
2
4
6
8
0
V DS , Drain-to-Source Voltage (V)
4
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
I D =2.7A
V G =10V
Normalized RDS(ON)
Normalized BVDSS (V)
1.1
1
2
1
0.9
0.8
0
-50
0
50
100
150
-50
o
Fig 3. Normalized BVDSS v.s. Junction
50
100
150
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.5
T j = 150 o C
Normalized VGS(th) (V)
10
IS (A)
0
T j , Junction Temperature ( o C )
T j , Junction Temperature ( C)
T j = 25 o C
1
1
0.5
0
0.1
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP05N50H-HF
f=1.0MHz
10000
16
V DS =260V
V DS =320V
V DS =400V
12
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =3.1A
8
100
C oss
4
C rss
0
1
0
10
20
30
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
ID (A)
100us
1ms
1
10ms
100m
1s
DC
o
T c =25 C
Single Pulse
0.1
1
10
100
1000
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
0.01
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4