AP0904GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
BVDSS
RDS(ON)
ID
D
40V
11.5mΩ
13.5A
G
S
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK® 3x3 package is special for DC-DC converters
application and lower 1.0mm profile with backside heat sink.
D
D
D
S
S
S
G
PMPAK ® 3x3
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
40
V
+20
V
3
13.5
A
3
10.8
A
50
A
3.57
W
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Value
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Unit
3.6
℃/W
35
℃/W
1
201104281
AP0904GYT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
40
-
-
V
VGS=10V, ID=13A
-
9
11.5
mΩ
VGS=4.5V, ID=8A
-
12
16
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.57
3
V
gfs
Forward Transconductance
VDS=10V, ID=13A
-
35
-
S
IDSS
Drain-Source Leakage Current
VDS=32V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=13A
-
9
14.4
nC
Qgs
Gate-Source Charge
VDS=20V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5.5
-
nC
td(on)
Turn-on Delay Time
VDS=20V
-
8
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
20
-
ns
tf
Fall Time
VGS=10V
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
680
1080
pF
Coss
Output Capacitance
VDS=15V
-
200
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.1
4.2
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=2.9A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=13A, VGS=0V,
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 85oC at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP0904GYT-HF
60
60
T A =25 o C
10V
7.0V
6.0V
5.0V
V G = 4.0V
40
10V
7.0V
6.0V
5.0V
V G = 4.0V
50
ID , Drain Current (A)
ID , Drain Current (A)
50
T A = 150 o C
30
20
40
30
20
10
10
0
0
0
1
2
3
4
0
5
V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
2.0
I D =13A
V G =10V
ID=8A
T A =25 ℃
13
Normalized RDS(ON)
1.6
RDS(ON) (mΩ)
12
11
10
1.2
0.8
9
8
0.4
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
16
2.0
I D =250uA
Normalized VGS(th) (V)
1.6
IS(A)
12
T j =150 o C
T j =25 o C
8
1.2
0.8
4
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP0904GYT-HF
I D = 13 A
V DS =20V
1000
8
800
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1200
10
6
C iss
600
4
400
2
200
0
C oss
C rss
0
0
4
8
12
16
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
100us
10
1ms
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthja)
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthia=85 ℃/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
VG
V DS =5V
ID , Drain Current (A)
50
QG
4.5V
40
QGS
30
QGD
20
T j =150 o C
o
T j =25 C
10
Charge
o
T j =-40 C
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4