A-POWER AP10N70P_07

AP10N70R/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
BVDSS
600V
RDS(ON)
0.6Ω
ID
G
10A
S
Description
AP10N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.Both TO-220
and TO-262 type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220 and TO-262 package is widely preferred for commercialindustrial applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
G
G
D
D
S
S
TO-262(R)
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
± 30
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
10
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
6.3
A
40
A
174
W
1.39
W/℃
50
mJ
10
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Unit
0.72
℃/W
62
℃/W
201022073-1/4
AP10N70R/P
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1.0mA
600
-
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.0A
-
-
0.6
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
5
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=10A
-
35.9
57
nC
IDSS
o
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
8.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
11.5
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
14.9
-
ns
tr
Rise Time
ID=10A
-
19.7
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
51.7
-
ns
tf
Fall Time
RD=30Ω
-
23.3
-
ns
Ciss
Input Capacitance
VGS=0V
-
1950 3120
pF
Coss
Output Capacitance
VDS=15V
-
630
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Ω
Min.
Typ.
Tj=25℃, IS=10A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
3
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
575
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10.6
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=1.0mH , RG=25Ω , IAS=10A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP10N70P/R
20
16
o
T C =25 C
ID , Drain Current (A)
ID , Drain Current (A)
16
10V
6.0V
5.0V
T C =150 o C
10V
6.0V
5.0V
12
8
4.5V
12
4.5V
8
V G = 4.0V
4
4
V G =4.0V
0
0
0
5
10
15
0
20
V DS , Drain-to-Source Voltage (V)
10
20
30
40
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.2
1.3
I D =5A
V G =10V
2.8
Normalized RDS(ON)
Normalized BVDSS (V)
1.2
1.1
1
2.4
2
1.6
0.9
1.2
0.8
0.8
-50
0
50
100
25
150
50
75
100
125
150
T j , Junction Temperature ( o C )
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
10
1.4
IS (A)
T j = 150 o C
Normalized VGS(th) (V)
1.2
T j = 25 o C
1
1
0.8
0.6
0.1
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP10N70P/R
f=1.0MHz
10000
I D =10A
C iss
V DS =320V
V DS =400V
V DS =480V
12
C (pF)
VGS , Gate to Source Voltage (V)
16
8
C oss
100
4
C rss
0
1
0
20
40
1
60
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
100us
ID (A)
10
1ms
1
10ms
100ms
o
T c =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
1S
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
DC
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-262
E
A
SYMBOLS
c1
L2
L1
D
D
L4
b1
L3
A1
b3
b
L
Millimeters
MIN
NOM
MAX
A
4.24
4.44
4.64
A1
-----
-----
2.70
b
0.66
0.76
0.86
b1
1.07
1.27
1.47
b3
0.76
0.86
1.06
c
0.30
0.40
0.50
c1
1.15
1.30
1.45
D
8.30
8.60
8.90
E
9.90
10.20
10.50
e
2.04
2.54
3.04
L
10.50
11.00
11.50
L1
9.50
10.00
10.30
L3
----
1.30
----
L4
10.80
11.30
11.35
1.All Dimensions Are in Millimeters.
c
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-262
Part Number
Package Code
10N70R
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
A
E
Millimeters
SYMBOLS
φ
L2
L5
c1
D
L4
b1
L3
MIN
NOM
MAX
A
4.25
4.48
4.70
b
b1
c
c1
0.65
0.80
0.90
1.15
1.38
1.60
0.40
0.50
0.60
1.00
1.20
1.40
E
9.70
10.00
10.40
E1
---
---
11.50
L1
L
c
b
e
----
2.54
----
L
12.70
13.60
14.50
L1
2.60
2.80
3.00
L2
1.00
1.40
1.80
L3
2.6
3.10
3.6
L4
14.70
15.50
16
L5
6.30
6.50
6.70
φ
3.50
3.60
3.70
D
8.40
8.90
9.40
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
Package Code
10N70R
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence