A-POWER AP1430GEU6-HF

AP1430GEU6-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
S2
▼ Simple Gate Drive
G2
D1
▼ Small Package Outline
D2
▼ Embedded Protection Diode
G1
▼ RoHS Compliant & Halogen Free
SOT-363
S1
BVDSS
60V
RDS(ON)
2.5Ω
ID
230mA
D1
Description
G1
D2
G2
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, low on-resistance and
cost-effectiveness.
SOT-363 package is ultra-small surface mount package and lead
free RoHS compliant.
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Continuous Drain Current, V GS @ 10V
3
Continuous Drain Current, V GS @ 10V
3
1
Rating
Units
60
V
+20
V
230
mA
190
mA
1
A
0.277
W
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
450
℃/W
1
201205221
AP1430GEU6-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
2
Min.
Typ.
60
-
-
V
VGS=10V, ID=230mA
-
-
2.5
Ω
VGS=4.5V, ID=150mA
-
-
4
Ω
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=300mA
-
0.6
-
S
VGS=0V, ID=250uA
2
Max. Units
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=300mA
-
1
1.6
nC
Qgs
Gate-Source Charge
VDS=30V
-
0.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
0.3
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
11
-
ns
tr
Rise Time
ID=300mA
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
62
-
ns
tf
Fall Time
VGS=10V
-
30
-
ns
Ciss
Input Capacitance
VGS=0V
-
35
56
pF
Coss
Output Capacitance
VDS=25V
-
9
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6.5
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
Test Conditions
IS=210mA, VGS=0V
Max. Units
1.3
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board ; 800 ℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP1430GEU6-HF
1.2
1.6
o
1.2
10V
7.0V
6 0V
5.0 V
V G = 4 .0V
T A =150 o C
10V
7.0V
6 .0V
5.0 V
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 C
V G = 4 .0V
0.8
0.8
0.4
0.4
0
0
0
2
4
6
8
10
0
V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
2
I D = 150m A
I D = 230m A
V G =10V
T A =25 o C
1.9
Normalized RDS(ON)
2
RDS(ON) (Ω)
1.8
1.7
1.6
1.2
1.6
20
0.8
1.5
0.4
1.4
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0.5
1.6
I D =250uA
0.4
Normalized VGS(th)
IS (A)
1.2
0.3
T j =150 o C
0.2
T j =25 o C
0.8
0.4
0.1
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP1430GEU6-HF
f=1.0MHz
10
50
8
40
C (pF)
VGS , Gate to Source Voltage (V)
I D =0.3A
V DS =30V
6
C iss
30
4
20
2
10
C oss
C rss
0
0
0
0.4
0.8
1.2
1.6
2
1
2.4
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
10
Normalized Thermal Response (Rthja)
1
1
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Operation in this area
limited by RDS(ON)
100us
1ms
10ms
100ms
1s
0.1
0.01
T A =25 o C
Single Pulse
DC
0.001
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 800℃/W
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
0.8
0.4
ID , Drain Current (A)
ID , Drain Current (A)
V DS =5V
0.6
0.4
0.2
0.3
0.2
0.1
T j =150 o C
o
T j =25 C
o
T j =-40 C
0
0
1
2
3
0
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4