A-POWER AP15P10GP_09

AP15P10GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
-100V
RDS(ON)
230mΩ
ID
G
▼ RoHS Compliant
BVDSS
-15A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
S
TO-263(S)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP15P10GP)
are available for low-profile applications.
G
D
Absolute Maximum Ratings
Symbol
Parameter
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
-15
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
-9.4
A
1
IDM
Pulsed Drain Current
-60
A
[email protected]=25℃
Total Power Dissipation
96
W
Linear Derating Factor
0.77
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.3
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
40
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
200910083
AP15P10GS/P
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-100
-
-
V
-
-0.1
-
V/℃
VGS=-10V, ID=-6A
-
-
230
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
VGS=0V, ID=-1mA
2
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-9A
-
8
-
S
IDSS
Drain-Source Leakage Current
VDS=-100V, VGS=0V
-
-
-25
uA
Drain-Source Leakage Current (T j=125 C) VDS=-80V, VGS=0V
-
-
-100
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=-9A
-
37
60
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-80V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
15
-
nC
VDS=-50V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-9A
-
25
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=-10V
-
56
-
ns
tf
Fall Time
RD=5.6Ω
-
36
-
ns
Ciss
Input Capacitance
VGS=0V
-
1180 1900
pF
Coss
Output Capacitance
VDS=-25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.6
5
Ω
Min.
Typ.
IS=-9A, VGS=0V
-
-
-1.3
V
IS=-9A, VGS=0V,
-
95
-
ns
dI/dt=-100A/µs
-
410
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP15P10GS/P
30
30
-10V
-10V
T C = 150 o C
T C =25 o C
-7.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
-7.0V
20
-5.0V
10
-4.5V
20
-5.0V
10
-4.5V
V G = - 3 .0V
V G = - 3 .0V
0
0
0
5
10
15
20
25
0
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
15
20
25
Fig 2. Typical Output Characteristics
2.4
550
I D = -6 A
V G = - 10V
Normalized RDS(ON)
I D = -6 A
T C =25 ℃
450
RDS(ON) (mΩ )
5
-V DS , Drain-to-Source Voltage (V)
350
1.9
1.4
0.9
250
0.4
150
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
10
8
T j =25 o C
Normalized -VGS(th) (V)
-IS(A)
T j =150 o C
6
4
2
0
1.1
0.7
0.3
0
0.4
0.8
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP15P10GS/P
f=1.0MHz
12
10000
I D = -9A
V DS = -80V
8
C iss
1000
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
C oss
100
4
C rss
2
10
0
0
10
20
30
1
40
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Operation in this area
limited by RDS(ON)
Normalized Thermal Response (Rthjc)
1
100us
10
-ID (A)
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
VG
V DS =-5V
T j =25 o C
-ID , Drain Current (A)
8
T j =150 o C
QG
-10V
6
QGS
QGD
4
2
Charge
Q
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4