A-POWER AP16N50W

AP16N50W
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
500V
RDS(ON)
0.4Ω
ID
G
16A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
D
TO-3P
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
+30
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
16
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
11
A
60
A
250
W
72
mJ
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
0.5
℃/W
40
℃/W
1
201010266
AP16N50W
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
500
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=6.5A
-
-
0.4
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
8
-
S
IDSS
Drain-Source Leakage Current
VDS=500V, VGS=0V
-
-
20
uA
Drain-Source Leakage Current (T j=125 C) VDS=500V, VGS=0V
-
-
200
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=16A
-
33
53
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=400V
-
11
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
9
-
nC
VDD=200V
-
55
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=8A
-
50
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
141
-
ns
tf
Fall Time
RD=25Ω
-
40
-
ns
Ciss
Input Capacitance
VGS=0V
-
1950 3120
pF
Coss
Output Capacitance
VDS=15V
-
630
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
pF
Min.
Typ.
-
-
16
A
-
-
60
A
IS=16A, VGS=0V
-
-
1.3
V
IS=16A, VGS=0V
-
495
-
ns
dI/dt=100A/µs
-
10
-
uC
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V
1
Pulsed Source Current ( Body Diode )
2
Forward On Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Max. Units
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=50V, VGS=10V, L=1mH, RG=25Ω, IAS=12A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP16N50W
30
16
o
16V
12V
10V
7.0V
o
T C =150 C
16 V
12 V
10V
7.0V
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 C
20
V G = 6.0 V
10
12
V G = 6.0V
8
4
0
0
0.0
4.0
8.0
12.0
16.0
0.0
20.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12.0
16.0
20.0
24.0
28.0
Fig 2. Typical Output Characteristics
2.8
1.2
I D =6.5A
V G =10V
Normalized RDS(ON)
2.4
Normalized BVDSS (V)
8.0
V DS , Drain-to-Source Voltage (V)
1.1
1
2.0
1.6
1.2
0.9
0.8
0.8
0.4
-50
0
50
100
150
-50
o
Fig 3. Normalized BVDSS v.s. Junction
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Temperature
1.5
8
1.3
Normalized VGS(th) (V)
10
T j =25 o C
T j =150 o C
IS(A)
0
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
6
4
1.1
0.9
0.7
2
0.5
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP16N50W
C iss
10
I D =16A
V DS =400V
1000
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
12
6
C oss
100
4
10
2
C rss
1
0
0
10
20
30
1
40
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
ID (A)
10
1ms
10ms
100ms
DC
1
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
Operation in this area
limited by RDS(ON)
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
1
10
100
1000
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4