A-POWER AP18N20GJ-HF

AP18N20GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristics
BVDSS
RDS(ON)
ID
D
▼ RoHS Compliant & Halogen-Free
200V
170mΩ
18A
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
TO-252(H)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18N20GJ)
are available for low-profile applications.
G
D S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
± 20
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
18
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
9.5
A
60
A
89
W
0.7
W/℃
2
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
3
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
3
Value
Unit
1.4
℃/W
62.5
℃/W
110
℃/W
1
201006224
AP18N20GH/J-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
200
-
0.25
-
V
V/℃
ΔBVDSS/ΔTj
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=8A
-
-
170
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
VDS=10V, ID=10A
-
9.5
-
S
BVDSS
Drain-Source Breakdown Voltage
Min.
2
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=200V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= + 20V, VDS=0V
-
-
+100
nA
ID=10A
-
19
30
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=160V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6
-
nC
2
td(on)
Turn-on Delay Time
VDD=100V
-
9
-
ns
tr
Rise Time
ID=11A
-
21
-
ns
td(off)
Turn-off Delay Time
RG=9.1Ω,VGS=10V
-
25
-
ns
tf
Fall Time
RD=9.1Ω
-
19
-
ns
Ciss
Input Capacitance
VGS=0V
-
1065 1700
pF
Coss
Output Capacitance
VDS=25V
-
185
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
3
-
pF
Gate Resistance
f=1.0MHz
-
1.6
2.4
Ω
Min.
Typ.
IS=10A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
180
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
1150
-
nC
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18N20GH/J-HF
40
30
16V
12V
10V
8.0V
V G = 6 .0V
o
T C =150 C
ID , Drain Current (A)
o
T C =25 C
ID , Drain Current (A)
30
16V
12V
10V
8.0V
V G = 6 .0V
20
20
10
10
0
0
0
4
8
12
0
16
4
Fig 1. Typical Output Characteristics
12
16
20
Fig 2. Typical Output Characteristics
2.8
600
I D =8A
V GS =10V
I D =5A
T C =25 o C
2.4
Normalized RDS(ON)
520
RDS(ON) (mΩ)
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
440
360
280
2
1.6
1.2
0.8
200
0.4
0
120
2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
14
12
Normalized VGS(th) (V)
1.3
IS(A)
10
8
6
T j =150 o C
T j =25 o C
1.1
0.9
4
0.7
2
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18N20GH/J-HF
15
f=1.0MHz
10000
I D =10A
V DS =100V
V DS =130V
V DS =160V
Ciss
1000
9
C (pF)
VGS , Gate to Source Voltage (V)
12
Coss
100
6
10
3
Crss
0
1
0
6
12
18
24
30
1
11
21
31
41
51
61
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
100us
10
ID (A)
1ms
10ms
100ms
1s
DC
1
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
15
V DS =5V
VG
T j =25 o C
o
T j =150 C
ID , Drain Current (A)
12
QG
10V
9
QGS
QGD
6
3
Charge
Q
0
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4