A-POWER AP18N20GS-HF

AP18N20GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
200V
RDS(ON)
170mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
18A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-220(P)
S
The TO-220 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18N20GS)
are available for low-profile applications.
G
D
S
TO-263(S)
Absolute Maximum Ratings
Rating
Units
VDS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
18
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
9.5
A
Symbol
Parameter
1
IDM
Pulsed Drain Current
60
A
[email protected]=25℃
Total Power Dissipation
89
W
Linear Derating Factor
0.7
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Units
1.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
40
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
201001113
AP18N20GS/P-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max.
Units
200
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.25
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=8A
-
-
170
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=10A
-
9.5
-
S
IDSS
Drain-Source Leakage Current
IGSS
VGS=0V, ID=1mA
Min.
VDS=200V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=125oC) VDS=160V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
2
Qg
Total Gate Charge
ID=10A
-
19
30
nC
Qgs
Gate-Source Charge
VDS=160V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6
-
nC
2
td(on)
Turn-on Delay Time
VDD=100V
-
9
-
ns
tr
Rise Time
ID=11A
-
21
-
ns
td(off)
Turn-off Delay Time
RG=9.1Ω,VGS=10V
-
25
-
ns
tf
Fall Time
RD=9.1Ω
-
19
-
ns
Ciss
Input Capacitance
VGS=0V
-
1065
1700
pF
Coss
Output Capacitance
VDS=25V
-
185
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
3
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
2.4
Ω
Min.
Typ.
Max.
Units
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=10A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
180
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
1150
-
nC
Notes:
1.Pulse width limited by Maximum junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18N20GS/P-HF
30
40
16 V
12 V
10 V
8.0 V
30
o
16 V
12 V
10 V
8.0 V
T C = 150 C
V G = 6 .0V
20
ID , Drain Current (A)
ID , Drain Current (A)
T C = 25 o C
20
V G = 6 .0V
10
10
0
0
0
4
8
12
0
16
Fig 1. Typical Output Characteristics
8
12
16
20
Fig 2. Typical Output Characteristics
2.8
240
I D =8A
V G =10V
I D =5A
o
T C =25 C
Normalized RDS(ON)
2.4
210
RDS(ON) (mΩ)
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
180
2.0
1.6
1.2
150
0.8
0.4
120
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
14
12
Normalized VGS(th) (V)
1.3
IS(A)
10
T j =150 o C
8
T j =25 o C
6
4
1.1
0.9
0.7
2
0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18N20GS/P-HF
f=1.0MHz
14
10000
I D = 10 A
V DS = 100 V
V DS = 130 V
V DS = 160 V
10
C iss
1000
C (pF)
VGS , Gate to Source Voltage (V)
12
8
C oss
100
6
4
10
2
C rss
0
1
0
4
8
12
16
20
24
1
11
21
31
41
51
61
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
100us
ID (A)
10
1ms
10ms
1
100ms
1s
DC
o
T c =25 C
Single Pulse
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
SINGLE PULSE
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
V DS =5V
T j =25 o C
VG
o
T j =150 C
ID , Drain Current (A)
12
QG
10V
9
QGS
QGD
6
3
Charge
Q
0
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4