A-POWER AP18P10AGHJ-HF

AP18P10AGH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
-100V
RDS(ON)
140mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
-12A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP18P10AGJ) is
available for low-profile applications.
G
D
D
S
TO-252(H)
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
+30
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
-12
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
-7.4
A
-48
A
39
W
2
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
3
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Units
3.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
201203132
AP18P10AGH/J-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
-100
-
-
V
VGS=-10V, ID=-8A
-
-
140
mΩ
VGS=0V, ID=-250uA
2
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-2
-
-4
V
gfs
Forward Transconductance
VDS= -10V, ID= -8A
-
13
-
S
IDSS
Drain-Source Leakage Current
VDS=-80V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS= +30V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-8A
-
35
55
nC
Qgs
Gate-Source Charge
VDS=-80V
-
4.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
14.5
-
nC
td(on)
Turn-on Delay Time
VDS=-50V
-
9
-
ns
tr
Rise Time
ID=-8A
-
16
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
42
-
ns
tf
Fall Time
VGS=-10V
-
34
-
ns
Ciss
Input Capacitance
VGS=0V
-
1380 2200
pF
Coss
Output Capacitance
VDS=-25V
-
115
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Rg
Gate Resistance
f=1.0MHz
-
7
14
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-8A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-8A, VGS=0V,
-
55
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
155
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18P10AGH/J-HF
30
40
-ID , Drain Current (A)
30
V G = - 5.0V
20
-10V
-8.0V
-7.0V
-6.0V
T C =150 o C
-ID , Drain Current (A)
-10V
-8.0V
-7.0V
-6.0V
T C = 25 o C
20
V G = -5.0V
10
10
0
0
0
4
8
12
16
0
Fig 1. Typical Output Characteristics
8
12
16
Fig 2. Typical Output Characteristics
2.4
1.2
ID= -8A
V G = -10V
I D = -1mA
2.0
Normalized RDS(ON)
Normalized -BVDSS (V)
4
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
1.1
1
1.6
1.2
0.9
0.8
0.8
0.4
-50
0
50
100
150
-50
T j , Junction Temperature ( o C)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. Normalized BV DSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
12
I D = -250uA
10
Normalized -VGS(th) (V)
1.5
-IS(A)
8
T j =150 o C
6
T j =25 o C
4
1.0
0.5
2
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18P10AGH/J-HF
f=1.0MHz
12
2000
V DS = - 80 V
ID= -8A
10
-VGS , Gate to Source Voltage (V)
1600
C iss
C (pF)
8
6
1200
800
4
400
2
C oss
C rss
0
0
0
10
20
30
1
40
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
Operation in this area
limited by RDS(ON)
100us
10
-ID (A)
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
0
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
16
16
-ID , Drain Current (A)
-ID , Drain Current (A)
V DS = -5V
12
8
T j =150 o C
4
12
8
4
T j =25 o C
T j = -40 o C
0
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
25
50
75
100
125
150
o
T C , Case Temperature ( C )
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4