A-POWER AP18P10GI

AP18P10GI
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
BVDSS
-100V
▼ Simple Drive Requirement
RDS(ON)
160mΩ
▼ Fast Switching Characteristic
ID
G
D
S
-12A
TO-220CFM(I)
Description
D
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial
-industrial through hole applications.
G
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
±32
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
-12
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
-10
A
-48
A
31.25
W
0.25
W/℃
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
40
mJ
IAR
Avalanche Current
-9
A
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
4.0
℃/W
65
℃/W
201022073-1/4
AP18P10GI
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-100
-
-
V
-
-0.1
-
V/℃
VGS=-10V, ID=-8A
-
-
160
mΩ
VGS=-4.5V, ID=-6A
-
-
200
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS= -10V, ID= -8A
-
8
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-100V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-80V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ±32V
-
-
±100
nA
ID=-8A
-
16
25.6
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
3
o
IGSS
3
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-80V
-
4.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
8.7
-
nC
VDS=-50V
-
9
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-8A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
45
-
ns
tf
Fall Time
RD=6.25Ω
-
40
-
ns
Ciss
Input Capacitance
VGS=0V
-
1590 2550
pF
Coss
Output Capacitance
VDS=-25V
-
110
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
8
12
Ω
Min.
Typ.
IS=-12A, VGS=0V
-
-
-1.3
V
IS=-8A, VGS=0V,
-
49
-
ns
dI/dt=-100A/µs
-
110
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
3
Forward On Voltage
3
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=-50V , L=1.0mH , RG=25Ω.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP18P10GI
20
40
-10V
-7.0V
-5.0V
-4.5V
o
T C = 25 C
15
-ID , Drain Current (A)
-ID , Drain Current (A)
30
-10V
-7.0V
-5.0V
-4.5V
T C =150 o C
20
10
10
V G = -3.0V
5
V G = -3.0 V
0
0
0
4
8
12
16
0
20
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
6
8
10
Fig 2. Typical Output Characteristics
300
2.0
I D = - 12 A
V G = -10V
I D = -8 A
T C =25 ℃
270
1.6
Normalized RDS(ON)
240
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
210
180
1.2
0.8
150
0.4
120
4
6
8
10
-50
0
50
100
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2.0
6
1.5
T j =150 o C
4
Normalized -VGS(th) (V)
-IS(A)
2
T j =25 o C
2
150
1.0
0.5
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP18P10GI
f=1.0MHz
10000
12
C iss
V DS = - 80 V
ID= -8A
1000
9
C (pF)
-VGS , Gate to Source Voltage (V)
15
6
C oss
C rss
100
3
10
0
0
10
20
30
1
40
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
100us
10
-ID (A)
1ms
10ms
100ms
1s
DC
1
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
V DS = -5V
T j =25 o C
-ID , Drain Current (A)
12.5
VG
T j =150 o C
QG
10
-4.5V
QGS
7.5
QGD
5
2.5
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220CFM
E
A
Millimeters
SYMBOLS
c2
φ
L4
MIN
NOM
MAX
A
4.50
4.70
4.90
A1
2.30
2.65
3.00
b
b1
c
c2
0.50
0.70
0.90
0.95
1.20
1.50
0.45
0.65
0.80
2.30
2.60
2.90
E
9.70
10.00 10.40
L3
2.91
3.41
L4
14.70 15.40 16.10
φ
e
L3
b1
A1
b
c
----
3.20
----
----
2.54
----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220CFM
Part Number
meet Rohs requirement
LOGO
18P10GI
YWWSSS
3.91
Package Code
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence