A-POWER AP18P10GK-HF

AP18P10GK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
S
▼ Fast Switching Characteristic
D
▼ RoHS Compliant & Halogen-Free
SOT-223
BVDSS
-100V
RDS(ON)
160mΩ
ID
-3.1A
G
D
Description
AP18P10 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
3
Rating
Units
-100
V
+20
V
[email protected]=25℃
Continuous Drain Current , VGS @ 10V
-3.1
A
[email protected]=70℃
Continuous Drain Current3, VGS @ 10V
-2.5
A
1
IDM
Pulsed Drain Current
-10
A
[email protected]=25℃
Total Power Dissipation
2.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
45
℃/W
1
201303111
AP18P10GK-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-100
-
-
V
VGS=-10V, ID=-2A
-
-
160
mΩ
VGS=-4.5V, ID=-1A
-
-
200
mΩ
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-2A
-
8.4
-
S
IDSS
Drain-Source Leakage Current
VDS=-80V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-2A
-
14
22.4
nC
Qgs
Gate-Source Charge
VDS=-50V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
7
-
nC
td(on)
Turn-on Delay Time
VDS=-50V
-
10
-
ns
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
55
-
ns
tf
Fall Time
VGS=-10V
-
22
-
ns
Ciss
Input Capacitance
VGS=0V
-
1500 2400
pF
Coss
Output Capacitance
VDS=-25V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-2A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-2A, VGS=0V,
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
75
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18P10GK-HF
20
40
-10V
-7.0V
-5.0V
-4.5V
-ID , Drain Current (A)
T A = 25 C
30
-10V
-7.0V
-5.0V
-4.5V
o
T A = 150 C
16
-ID , Drain Current (A)
o
20
12
8
V G = - 3.0V
10
4
V G = - 3.0V
0
0
0
4
8
12
16
20
0
24
-V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
12
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
2.4
ID=-2A
V G =-10V
ID=-2A
T A =25 ℃
2.0
Normalized RDS(ON)
RDS(ON) (mΩ)
150
140
1.6
1.2
130
0.8
0.4
120
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.4
1.2
Normalized VGS(th)
-IS(A)
6
4
T j =150 o C
T j =25 o C
1
0.8
2
0.6
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18P10GK-HF
f=1.0MHz
2400
I D = -2A
V DS = -50V
2000
8
1600
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
C iss
1200
4
800
2
400
C oss
C rss
0
0
0
10
20
30
1
40
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
-ID (A)
100us
Operation in this area
limited by RDS(ON)
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja=120 oC/W
DC
0.001
0.01
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4