AP2309GEN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Surface Mount Device
BVDSS
-30V
RDS(ON)
52mΩ
ID
- 4.2A
S
▼ RoHS Compliant & Halogen-Free
SOT-23
G
D
Description
AP2309 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
G
S
The special design SOT-23 package with good thermal performance is
widely preferred for all commercial-industrial surface mount applications
using infrared reflow technique and suited for voltage conversion or
switch applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 30
V
+20
V
3
-4.2
A
3
-3.3
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-16
A
PD@TA=25℃
Total Power Dissipation
1.38
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
201203271
AP2309GEN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-4A
-
41.3
52
mΩ
VGS=-4.5V, ID=-3A
-
60.5
80
mΩ
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-1.57
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
-
9
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=-4A
-
7
11.2
nC
Qgs
Gate-Source Charge
VDS=-15V
-
2.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2.7
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
8
-
ns
tr
Rise Time
ID=-1A
-
4.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
22
-
ns
tf
Fall Time
VGS=-10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
830
1330
pF
Coss
Output Capacitance
VDS=-15V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
12
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.2A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-4A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2309GEN-HF
20
20
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
-ID , Drain Current (A)
16
T A = 150 o C
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
16
-ID , Drain Current (A)
T A =25 o C
12
8
4
65mΩ
12
8
4
0
0
0
1
2
3
4
5
0
-V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
70
I D = -3A
I D = -4A
V GS = -10V
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ )
1.4
60
1.2
1
50
0.8
0.6
40
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
4
I D = -250uA
1.6
T j =150 o C
2
Normalized -VGS(th)
-IS(A)
3
T j =25 o C
1.2
0.8
1
0.4
2.01E+08
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2309GEN-HF
f=1.0MHz
1200
1000
8
65mΩ
800
I D = -4A
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
V DS = -15V
C iss
600
4
400
2
200
C oss
C rss
0
0
0
4
8
12
1
16
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
100us
-ID (A)
Operation in this area
limited by RDS(ON)
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
Normalized Thermal Response (Rthja)
DUTY=0.5
0.01
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 270℃/W
0.001
0.01
0.1
1
10
0.0001
100
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
6
V DS = -5V
5
-ID , Drain Current (A)
-ID , Drain Current (A)
16
12
8
4
3
2
o
T j =150 C
4
1
T j =25 o C
T j = -40 o C
0
0
1
2
3
4
0
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
o
T A , Ambient Temperature ( C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4