AP2325GEN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Surface Mount Device
BVDSS
-20V
RDS(ON)
90mΩ
ID
- 3A
S
▼ RoHS Compliant & Halogen-Free
SOT-23
G
D
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching,low on-resistance and cost-effectiveness.
G
The SOT-23 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 20
V
+12
V
3
-3
A
3
-2.4
A
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
-12
A
PD@TA=25℃
Total Power Dissipation
1.25
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient 3
100
℃/W
Data and specifications subject to change without notice
1
201112071
AP2325GEN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-20
-
-
V
VGS=-4.5V, ID=-3A
-
70
90
mΩ
VGS=-2.5V, ID=-2A
-
95
130
mΩ
-0.3
-0.7
-1
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-3A
-
8
-
S
IDSS
Drain-Source Leakage Current
VDS=-16V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=-3A
-
6
9.6
nC
Qgs
Gate-Source Charge
VDS=-10V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
1.7
-
nC
td(on)
Turn-on Delay Time
VDS=-10V
-
7
-
ns
tr
Rise Time
ID=-1A
-
16
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
21
-
ns
tf
Fall Time
VGS=-5V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
520
830
pF
Coss
Output Capacitance
VDS=-10V
-
70
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
Min.
Typ.
pF
-
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.2A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-3A, VGS=0V,
-
15
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2325GEN-HF
12
12
-5.0V
-4.5V
-3.5V
-2.5V
-ID , Drain Current (A)
10
T A = 150 o C
8
V G = -2.0V
6
4
2
8
65mΩ
6
V G = -2.0V
4
2
0
0
0
1
2
3
4
5
0
1
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
150
I D = -2A
I D = -3A
V GS = -4.5V
T A =25 o C
1.6
Normalized RDS(ON)
130
RDS(ON) (mΩ )
-5.0V
-4.5V
-3.5V
-2.5V
10
-ID , Drain Current (A)
T A =25 o C
110
90
1.2
0.8
0.4
70
0
50
1
2
3
4
5
-50
6
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
2
I D = -250uA
Normalized -VGS(th) (V)
1.6
3
-IS(A)
T j =150 o C
T j =25 o C
2
1.2
0.8
1
0.4
2.01E+08
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2325GEN-HF
f=1.0MHz
8
800
600
6
65mΩ
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -3A
V DS = -10V
4
400
2
200
0
0
0
2
4
6
8
C oss
C rss
1
10
C iss
5
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
10
-ID (A)
Normalized Thermal Response (Rthja)
DUTY=0.5
Operation in this area
limited by RDS(ON)
1ms
10ms
1
100ms
0.1
1s
DC
o
T A =25 C
Single Pulse
0.01
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 270℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
4
-ID , Drain Current (A)
VG
3
QG
-4.5V
QGS
2
QGD
1
Charge
Q
0
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 11. Maximum Continuous Drain
Current v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4