A-POWER AP2332GN-HF

AP2332GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Surface Mount Device
S
▼ Halogen Free & RoHS Compliant Product
SOT-23
BVDSS
600V
RDS(ON)
300Ω
ID
27mA
G
D
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
S
The SOT-23 package is widely used for commercial-industrial applications.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
600
V
+20
V
3
27
mA
3
21
mA
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
100
mA
[email protected]=25℃
Total Power Dissipation
0.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
250
℃/W
1
201008022
AP2332GN-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
600
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=16mA
-
-
300
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=16mA
-
28
-
mS
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
1.8
2.5
3.2
nC
2
Qg
Total Gate Charge
ID=0.1A
Qgs
Gate-Source Charge
VDS=200V
-
1.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
0.8
-
nC
VDS=300V
-
11.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=10mA
-
14.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
14
-
ns
tf
Fall Time
RD=30kΩ
-
120
-
ns
Ciss
Input Capacitance
VGS=0V
8.8
12.5
16.2
pF
Coss
Output Capacitance
VDS=25V
7
10
13
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
5
7
9
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=0.05A, VGS=0V
Max. Units
1.5
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2332GN-HF
40
30
ID , Drain Current (mA)
30
10V
9.0V
8.0V
7.0V
V G = 6.0V
o
T A = 150 C
10V
9.0V
8.0V
7.0V
20
V G = 6.0V
ID , Drain Current (A)
o
T A = 25 C
20
10
10
0
0
0.0
2.0
4.0
6.0
8.0
0.0
2.0
4.0
6.0
8.0
10.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.3
2.8
I D =16mA
V G =10V
2.4
Normalized RDS(ON)
Normalized BVDSS (V)
1.2
1.1
1
2.0
1.6
1.2
0.9
0.8
0.4
0.8
-50
0
50
100
-50
150
o
Fig 3. Normalized BVDSS v.s. Junction
50
100
150
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
0.5
2.0
0.4
1.5
T j =150 o C
Normalized VGS(th) (V)
IS(A)
0
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
T j =25 o C
0.3
0.2
1.0
0.5
0.0
0.1
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2332GN-HF
12
f=1.0MHz
20
16
8
C (pF)
VGS , Gate to Source Voltage (V)
I D =0.1A
V DS =200V
10
C iss
12
6
C oss
8
C rss
4
4
2
0
0
0
0.4
0.8
1.2
1.6
2
2.4
1
2.8
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
1ms
Operation in this area
limited by RDS(ON)
10ms
0.01
100ms
1s
DC
0.001
o
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
1
0.1
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
PDM
t
0.05
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.02
Rthja = 250℃/W
0.01
Single Pulse
0.01
0.0001
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Circuit
4