A-POWER AP2344GEN-HF

AP2344GEN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 1.8V Gate Drive
D
▼ Lower Gate Charge
▼ Fast Switching Performance
BVDSS
20V
RDS(ON)
23mΩ
ID
6.2A
S
▼ RoHS Compliant & Halogen-Free
SOT-23
G
D
Description
AP2344 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The special design SOT-23 package with good thermal performance is
widely preferred for all commercial-industrial surface mount applications
using infrared reflow technique and suited for voltage conversion or switch
applications.
G
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
20
V
+8
V
3
6.2
A
3
5
A
20
A
1.38
W
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
201209241
AP2344GEN-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=6A
-
18.4
23
mΩ
VGS=2.5V, ID=4A
-
20.7
27
mΩ
VGS=1.8V, ID=2A
-
25.3
36
mΩ
0.3
0.5
1
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=6A
-
24
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=6A
-
15
24
nC
Qgs
Gate-Source Charge
VDS=10V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
5
-
ns
tr
Rise Time
ID=1A
-
21
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
28
-
ns
tf
Fall Time
VGS=5V
-
19
-
ns
Ciss
Input Capacitance
VGS=0V
-
1060 1700
pF
Coss
Output Capacitance
VDS=10V
-
130
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
3
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.2A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
11
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
4
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10sec ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2344GEN-HF
30
30
20
ID , Drain Current (A)
ID , Drain Current (A)
T A = 150 o C
5.0V
4.5V
3.5V
2.5V
V G =1.8V
T A = 25 o C
10
0
5.0V
4.5V
3.5V
2.5V
V G =1.8V
20
10
0
0
1
2
0
3
1
2
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
26
2
I D =6A
V G =4.5V
I D =2A
T A =25 o C
1.8
24
Normalized RDS(ON)
RDSON (mΩ)
1.6
22
20
1.4
1.2
1
0.8
18
0.6
0.4
16
1
2
3
4
5
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2
I D =250uA
IS(A)
Normalized VGS(th)
6
4
T j =150 o C
T j =25 o C
2
1.5
1
0.5
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2344GEN-HF
f=1.0MHz
2000
I D =6A
V DS =10V
5
1600
4
C (pF)
VGS , Gate to Source Voltage (V)
6
3
1200
C iss
800
2
400
1
C oss
C rss
0
0
0
4
8
12
16
1
20
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
ID (A)
10
Operation in this area
limited by RDS(ON)
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
1ms
1
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
DC
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 270℃/W
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
10
V DS =5V
8
ID , Drain Current (A)
ID , Drain Current (A)
16
12
8
o
T j =150 C
T j =25 o C
4
6
4
2
T j = -40 o C
0
0
0
0.4
0.8
1.2
1.6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
2
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4