A-POWER AP25P15GS-HF

AP25P15GS-HF
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
-140V
RDS(ON)
95mΩ
ID
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
G
-23A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-140
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
-23
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
-14.5
A
1
IDM
Pulsed Drain Current
-80
A
[email protected]=25℃
Total Power Dissipation
96
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
Value
Units
1.3
℃/W
40
℃/W
1
200908191
AP25P15GS-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-140
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-12A
-
-
95
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-2
-
-4
V
gfs
Forward Transconductance
VDS=-10V, ID=-12A
-
35
-
S
IDSS
Drain-Source Leakage Current
VDS=-120V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=-18A
-
55
90
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-80V
-
9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
17
-
nC
VDS=-50V
-
13
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-18A
-
34
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
84
-
ns
tf
Fall Time
RD=2.8Ω
-
78
-
ns
Ciss
Input Capacitance
VGS=0V
-
5180 8300
pF
Coss
Output Capacitance
VDS=-25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
140
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.2
-
Ω
Min.
Typ.
IS=-12A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-18A, VGS=0V,
-
70
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
235
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP25P15GS-HF
50
80
-10V
- 7 .0V
- 6 .0V
- 5.0 V
V G = - 4 .0 V
60
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
T C =150 o C
40
-ID , Drain Current (A)
-ID , Drain Current (A)
T C = 25 o C
40
30
20
20
10
0
0
0
4
8
12
16
20
24
0
4
Fig 1. Typical Output Characteristics
12
16
20
Fig 2. Typical Output Characteristics
90
2.4
I D = - 12 A
V G = -10V
I D = -12 A
T C =25 ℃
2.0
Normalized RDS(ON)
86
RDS(ON) (mΩ )
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
82
78
74
1.6
1.2
0.8
70
0.4
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
12
10
Normalized -VGS(th) (V)
1.2
-IS(A)
8
T j =150 o C
T j =25 o C
6
4
1.0
0.8
0.6
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP25P15GS-HF
12
10
6000
8
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
8000
V DS = - 80 V
I D = - 18 A
6
C iss
4000
4
2000
2
0
0
0
20
40
60
1
80
5
9
13
17
21
25
C oss
C rss 29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthjc)
Operation in this area
limited by RDS(ON)
100us
-ID (A)
10
1ms
10ms
1
100ms
DC
T c =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4