AP2615GY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Characteristic
D
▼ Lower Gate Charge
▼ Small Footprint & Low Profile Package
▼ RoHS Compliant & Halogen-Free
BVDSS
-30V
RDS(ON)
52mΩ
ID
G
-5A
S
S
D
Description
D
AP2615 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The SOT-26 package is widely used for all commercial-industrial
applications.
SOT-26
D
D
G
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-30
V
+ 20
V
3
-5
A
3
-4.2
A
-20
A
2
W
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201210232
AP2615GY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-4A
-
40
52
mΩ
VGS=-4.5V, ID=-3A
-
60
87
mΩ
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-2.4
V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
-
8
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-4A
-
5.7
9.1
nC
Qgs
Gate-Source Charge
VDS=-15V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2.8
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
6
-
ns
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
20
-
ns
tf
Fall Time
VGS=-10V
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
480
770
pF
Coss
Output Capacitance
VDS=-15V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=-1.7A, VGS=0V
Max. Units
-1.2
V
trr
Reverse Recovery Time
IS=-4A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 156℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2615GY-HF
20
20
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
-ID , Drain Current (A)
16
16
12
8
65mΩ
12
8
4
4
0
0
0
1
2
3
4
5
0
6
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
1.8
I D =-3A
I D =-4.2A
T A =25 o C o
T A =25 C
I D = -4A
V GS = -10V
Normalized RDS(ON)
1.6
60
RDS(ON) (mΩ )
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
TA=150oC
-ID , Drain Current (A)
T A =25 o C
50
1.4
1.2
1
40
0.8
0.6
30
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2
I D = -250uA
1.6
Normalized -VGS(th)
-IS(A)
6
4
T j =150 o C
T j =25 o C
1.2
0.8
2
0.4
2.01E+08
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j , Junction Temperature (
150
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2615GY-HF
f=1.0MHz
800
I D = -4A
V DS = -15V
8
600
65mΩ
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
C iss
400
4
200
2
C oss
C rss
0
0
0
2
4
6
8
10
1
12
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
-ID (A)
Operation in this area
limited by RDS(ON)
100us
1ms
1
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 156℃/W
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
20
V DS =-5V
-ID , Drain Current (A)
-ID , Drain Current (A)
16
12
8
T j =150 o C
6
4
2
4
o
T j =25 C
T j = -40 o C
0
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4