A-POWER AP30G100W

AP30G100W
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
VCES
1000V
30A
IC
▼ High speed switching
▼ Low Saturation Voltage
VCE(sat)[email protected]=30A
▼ Industry Standard TO-3P Package
C
G
G
C
▼ RoHS Compliant
TO-3P
E
E
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VCES
Collector-Emitter Voltage
1000
V
VGE
Gate-Emitter Voltage
±30
V
[email protected]=25℃
Continuous Collector Current
60
A
[email protected]=100℃
Continuous Collector Current
30
A
ICM
Pulsed Collector Current 1
120
A
[email protected]=25℃
Maximum Power Dissipation
208
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
TL
Maximum Lead Temp. for Soldering Purposes
300
℃
, 1/8" from case for 5 seconds .
Notes:
1.Repetitive rating : Pulse width limited by max . junction temperature .
Thermal Data
Value
Units
Rthj-c
Thermal Resistance Junction-Case
0.6
℃/W
Rthj-a
Thermal Resistance Junction-Ambient
40
℃/W
Symbol
Parameter
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVCES
Parameter
Collect-to-Emitter Breakdown Voltage
IGES
Gate-to-Emitter Leakage Current
ICES
Collector-Emitter Leakage Current
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=30A
VGE=15V, IC=60A
Min.
1000
Typ.
-
Max.
-
VGE=±30V, VCE=0V
-
-
±500
nA
VCE=1000V, VGE=0V
-
-
1
mA
-
3
3.6
V
-
3.8
-
V
Test Conditions
VGE=0V, IC=250uA
Units
V
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=1mA
3
4.4
7
V
Qg
Total Gate Charge
IC=30A
-
55
88
nC
Qge
Gate-Emitter Charge
VCC=500V
-
12
-
nC
Qgc
Gate-Collector Charge
-
27
-
nC
td(on)
Turn-on Delay Time
-
30
-
ns
tr
Rise Time
-
40
-
ns
td(off)
Turn-off Delay Time
-
105
-
ns
tf
Fall Time
VGE=15V
VCC=500V,
Ic=30A,
VGE=15V,
RG=5Ω,
Inductive Load
-
290
440
ns
Eon
Turn-On Switching Loss
-
1.2
-
mJ
Eoff
Turn-Off Switching Loss
-
1.7
-
mJ
Cies
Input Capacitance
VGE=0V
-
1320
2110
pF
Coes
Output Capacitance
VCE=30V
-
105
-
pF
Cres
Reverse Transfer Capacitance
f=1.0MHz
-
9
-
pF
Data and specifications subject to change without notice
200828071-1/3
AP30G100W
160
100
T C =150 C
80
IC , Collector Current (A)
IC , Collector Current (A)
20V
18V
15V
12V
o
20V
18V
15V
T C =25 o C
120
12V
80
V GE =10V
40
60
V GE =10V
40
20
0
0
0
3
6
9
0
12
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
6
9
12
Fig 2. Typical Output Characteristics
160
6
V GE = 15 V
VCE(sat) ,Saturation Voltage(V)
V GE =15V
140
IC , Collector Current(A)
3
V CE , Collector-Emitter Voltage (V)
120
T C =25 ℃
100
T C =150 ℃
80
60
40
5
I C = 60 A
4
I C =30A
3
2
20
0
1
0
2
4
6
8
10
12
0
80
120
160
Junction Temperature ( o C)
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
1.4
f=1.0MHz
10000
Capacitance (pF)
Normalized VGE(th) (V)
40
1.1
C ies
C oes
100
0.8
C res
1
0.5
-50
0
50
100
Junction Temperature ( o C )
Fig 5. Gate Threshold Voltage
150
1
10
100
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2/3
AP30G100W
1
1000
Normalized Thermal Response (Rthjc)
IC, Peak Collector Current(A)
V GE =15V
T C =125 o C
100
10
Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
V CE , Collector-Emitter Voltage(V)
0.01
0.1
1
t , Pulse Width (s)
Fig 7. Turn-off SOA
Fig 8. Effective Transient Thermal
Impedance
20
20
o
TC=150 C
I C = 60 A
30 A
15 A
15
VCE , Collector-Emitter Voltage(V)
VCE , Collector-Emitter Voltage(V)
o
T C =25 C
10
5
0
I C = 60 A
30 A
15 A
15
10
5
0
0
4
8
12
16
20
0
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
8
12
16
20
Fig 10. Saturation Voltage vs. VGE
250
VGE , Gate -Emitter Voltage (V)
20
200
Power Dissipation (W)
4
V GE , Gate-Emitter Voltage(V)
150
100
50
I C = 3 0A
V CC =200V
V CC =300V
V CC =500V
16
12
8
4
0
0
0
50
100
150
200
0
20
40
60
Junction Temperature ( ℃ )
Q G , Gate Charge (nC)
Fig11. Power Dissipation vs. Junction
Temperature
Fig 12. Gate Charge Characterisitics
80
3/3
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-3P
E
A
Millimeters
SYMBOLS
φ
c1
D
D1
b1
b2
MIN
NOM
MAX
A
4.50
4.80
5.10
b
b1
b2
c
c1
0.90
1.00
1.30
1.80
2.50
3.20
1.30
--
2.30
0.40
0.60
0.90
1.40
--
2.20
D
19.70
20.00
20.30
D1
14.70
15.00
15.30
E
15.30
--
16.10
e
4.45
5.45
6.45
L
17.50
--
20.50
φ
3.00
3.20
3.40
L
c
1.All Dimensions Are in Millimeters.
b
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-3P
Part Number
Package
30G100W
YWWSSS
LOGO
Date Code (YWWSSS)
Y :Last Digit Of The Year
WW:Week
SSS :Sequence