A-POWER AP30G120CSW-HF

AP30G120CSW-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
Features
▼ High Speed Switching
VCES
▼ Low Saturation Voltage
VCE(sat)[email protected]=30A
▼ CO-PAK, IGBT With FRD
▼ RoHS Compliant & Halogen-Free
IC
1200V
30A
C
G
C
TO-3P
E
G
Absolute Maximum Ratings
E
Parameter
Symbol
Rating
Units
VCES
Collector-Emitter Voltage
1200
V
VGE
Gate-Emitter Voltage
+30
V
[email protected]=25℃
Collector Current
60
A
[email protected]=100℃
Collector Current
30
A
ICM
Pulsed Collector Current1
120
A
[email protected]=100℃
Diode Forward Current
8
A
IFM
Diode Pulse Forward Current
40
A
[email protected]=25℃
Maximum Power Dissipation
208
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
TL
Maximum Lead Temp. for Soldering Purposes
300
℃
, 1/8" from case for 5 seconds .
Notes:
1.Pulse width limited by max. junction temperature .
Thermal Data
Parameter
Symbol
Rthj-c(IGBT)
Value
Units
0.6
℃/W
2
℃/W
40
℃/W
Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Electrical [email protected] j=25oC(unless otherwise specified)
Symbol
IGES
Parameter
Gate-to-Emitter Leakage Current
Test Conditions
VGE=+30V, VCE=0V
ICES
Collector-Emitter Leakage Current
VCE=1200V, VGE=0V
-
-
1
mA
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=30A
-
2.9
3.6
V
VGE=15V, IC=60A
-
3.8
-
V
VCE=VGE, IC=250uA
3
-
7
V
VGE(th)
Gate Threshold Voltage
Min.
-
Typ.
-
Max. Units
+500 nA
Qg
Total Gate Charge
IC=30A
-
63
100
nC
Qge
Gate-Emitter Charge
VCC=500V
-
12
-
nC
Qgc
Gate-Collector Charge
-
32
-
nC
td(on)
Turn-on Delay Time
-
40
-
ns
tr
Rise Time
-
45
-
ns
td(off)
Turn-off Delay Time
-
125
-
ns
tf
Fall Time
VGE=15V
VCC=600V,
Ic=30A,
VGE=15V,
RG=5Ω,
Inductive Load
-
430
860
ns
Eon
Turn-On Switching Loss
-
1.3
-
mJ
Eoff
Turn-Off Switching Loss
-
3.1
-
mJ
Cies
Input Capacitance
VGE=0V
-
1400
2240
pF
Coes
Output Capacitance
VCE=30V
-
120
-
pF
Cres
Reverse Transfer Capacitance
f=1.0MHz
-
15
-
pF
Electrical Characteristics of [email protected]=25℃(unless otherwise specified)
VF
Forward Voltage
IF=8A
-
1.2
1.6
V
trr
Reverse Recovery Time
IF=8A
-
230
-
ns
Qrr
Reverse Recovery Charge
di/dt = 100 A/µs
-
1.5
-
uC
Data and specifications subject to change without notice
1
201109301
AP30G120CSW-HF
160
120
20V
18V
15V
IC , Collector Current (A)
120
12V
80
V GE =10V
40
20V
18V
15V
o
T C =150 C
100
IC , Collector Current (A)
o
T C =25 C
80
12V
60
V GE =10V
40
20
0
0
0
4
8
12
16
0
20
4
V CE , Collector-Emitter Voltage (V)
8
12
16
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
6
V GE = 15 V
V GE =15V
VCE(sat) ,Saturation Voltage(V)
IC , Collector Current(A)
100
80
T C =25 ℃
T C =150 ℃
60
40
20
5
I C = 60 A
4
I C =30A
3
2
1
0
0
2
4
6
8
0
10
40
80
120
160
o
Junction Temperature ( C)
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
2400
2
I C =1mA
2000
Capacitance (pF)
Normalized VGE(th) (V)
1.6
1.2
0.8
1600
C ies
1200
800
0.4
400
C oes
C res
0
0
-50
0
50
100
o
Junction Temperature ( C )
Fig 5. Gate Threshold Voltage
150
1
5
9
13
17
21
25
29
33
37
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2
AP30G120CSW-HF
1
Normalized Thermal Response (Rthjc)
1000
IC ,Collctor Current(A)
100
10us
100us
10
1
1ms
0.1
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
10ms
0.01
0.01
1
10
100
1000
0.00001
10000
0.0001
0.001
V CE ,Collector - Emitter Voltage(V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 7. SOA Characteristics
Fig 8. Effective Transient Thermal
Impedance
10
10
TC=150oC
VCE , Collector-Emitter Voltage(V)
VCE , Collector-Emitter Voltage(V)
o
T C =25 C
8
6
I C = 60 A
4
I C = 30 A
I C = 15 A
2
0
8
6
I C = 60 A
4
I C = 30 A
I C = 15 A
2
0
0
4
8
12
16
20
0
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
8
12
16
20
Fig 10. Saturation Voltage vs. VGE
16
VGE , Gate -Emitter Voltage (V)
8
IF , Forward Current (A)
4
V GE , Gate-Emitter Voltage(V)
6
T j =150 o C
T j =25 o C
4
2
I C = 30 A
V CC =500V
12
8
4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
20
40
60
V F , Forward Voltage (V)
Q G , Gate Charge (nC)
Fig11. Forward Characteristic of
Fig 12. Gate Charge Characterisitics
80
Diode
3
AP30G120CSW-HF
IC , Maximum DC Collector Current (A)
80
60
40
20
0
25
50
75
100
125
150
o
T C , Case Temperature ( C)
Fig 13. Maximum Collector Current VS.
Case Temperature
4