A-POWER AP30G40GEO-HF

AP30G40GEO-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ ICP=150A @VGE=3.0V
▼ Low Gate Drive
C
C
C
VCE
400V
ICP
150A
C
▼ Strobe Flash Applications
▼ RoHS Compliant & Halogen-Free
TSSOP-8
E
E
E
C
G
G
E
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VCE
Collector-Emitter Voltage
400
V
VGEP
Peak Gate-Emitter Voltage
+6
V
Pulsed Collector Current, V GE @ 3.0V
150
A
ICP
o
1
[email protected]=25 C
Maximum Power Dissipation
1
W
TSTG
Storage Temperature Range
-55 to 150
o
C
-55 to 150
o
C
TJ
Junction Temperature Range
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGE=+ 6V, VCE=0V
Min.
Typ.
Max.
Units
-
-
+30
uA
-
-
10
uA
-
5.5
9
V
0.3
-
1.2
V
IGES
Gate-Emitter Leakage Current
ICES
Collector-Emitter Leakage Current VCE=400V, VGE=0V
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=3V, ICP=150A (Pulsed)
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=1mA
Qg
Total Gate Charge
IC=40A
-
60
96
nC
Qge
Gate-Emitter Charge
VCE=200V
-
6
-
nC
Qgc
Gate-Collector Charge
VGE=4V
-
25
-
nC
td(on)
Turn-on Delay Time
VCC=320V
-
200
-
ns
tr
Rise Time
IC=150A
-
900
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
800
-
ns
tf
Fall Time
VGE=3V
-
650
-
ns
Cies
Input Capacitance
VGE=0V
-
4140
-
pF
Coes
Output Capacitance
VCE=30V
-
30
-
pF
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
Cres
RthJA
1
Thermal Resistance Junction-Ambient
-
-
pF
125
o
C/W
Notes:
2
1.Surface mounted on 1 in copper pad of FR4 board, t=10s.
Data and specifications subject to change without notice
1
201111251
AP30G40GEO-HF
150
120
4.0V
3.5V
3.0V
V G =2.5V
IC , Collector Current (A)
120
4.0V
3.5V
3.0V
V G = 2.5V
T A = 150 o C
100
IC , Collector Current (A)
o
T A =25 C
90
60
80
60
40
30
20
0
0
0
2
4
6
8
0
10
2
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
6
8
Fig 2. Typical Output Characteristics
6
160
V GE = 3.0V
V GE =3.0V
VCE(sat) ,Saturation Voltage(V)
T A =25 o C
IC , Collector Current(A)
4
V CE , Collector-Emitter Voltage (V)
120
T A =150 o C
80
40
5
4
I C =100A
3
I C =60A
2
I C =20A
0
1
0
1
2
3
4
5
6
0
20
40
60
100
120
140
160
o
V CE , Collector-Emitter Voltage (V)
T j , Junction Temperature ( C)
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Collector- Emitter Saturation Voltage
v.s. Junction Temperature
10
10
o
T A =25 C
T A =150 o C
VCE ,Collector-Emitter Voltage(V)
VCE ,Collector-Emitter Voltage(V)
80
8
6
4
I C = 120A
I C =80A
I C =40A
2
0
8
6
4
I C =120A
I C =80A
I C =40A
2
0
0
1
2
3
4
V GE , Gate-Emitter Voltage(V)
Fig 5. Collector Current v.s.
Gate-Emitter Voltage
5
6
0
1
2
3
4
5
6
V GE , Gate-Emitter Voltage(V)
Fig 6. Collector Current v.s.
Gate-Emitter Voltage
2
AP30G40GEO-HF
f=1.0MHz
10000
160
T C =70 o C
ICP , Peak Collector Current (A)
C ies
C (pF)
1000
100
C oes
C res
10
120
80
40
0
1
5
9
13
17
21
25
29
33
37
0
2
4
6
8
V GE , Gate-to-Emitter Voltage (V)
V CE , Collector-Emitter Voltage (V))
Fig 7. Typical Capacitance Characterisitics
Fig 8. Maximum Pulse Collector Current
VCE
RC
90%
TO THE
OSCILLOSCOPE
C VCE
G
RG
VCC=320 V
10%
E
VGE
+
-
4V
VGE
td(on) tr
Fig 9. Switching Time Test Circuit
td(off) tf
Fig 10. Switching Time Waveform
6
VCE
TO THE
C
OSCILLOSCOPE
G
VCC=200V
VGE
E
+
1~3mA
-
IG
IC
VGE , Gate -Emitter Voltage (V)
I CP =40A
V CE =200V
5
4
3
2
1
0
0
20
40
60
80
100
Q G , Gate Charge (nC)
Fig 11. Gate Charge Test Circuit
Fig 12. Gate Charge Waveform
3