A-POWER AP3988P-HF

AP3988P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
600V
RDS(ON)
0.75Ω
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
10A
S
Description
AP3988 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. It
provide high blocking voltage to overcome voltage surge and sag in
the toughest power system with the best combination of fast
switching design and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
G
D
TO-220(P)
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
+30
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
10
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
5
A
36
A
125
W
2
W
40
mJ
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
[email protected]=25℃
Total Power Dissipation
2
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
201301021
AP3988P-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
3
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
600
-
-
V
VGS=10V, ID=4.5A
-
-
0.75
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=4.5A
-
7.5
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=4.5A
-
54
86
nC
Qgs
Gate-Source Charge
VDS=480V
-
10
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
24
-
nC
td(on)
Turn-on Delay Time
VDD=300V
-
17
-
ns
tr
Rise Time
ID=4.5A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
88
-
ns
tf
Fall Time
VGS=10V
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
2100 3360
pF
Coss
Output Capacitance
VDS=25V
-
200
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
15
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.6
5.2
Ω
Min.
Typ.
IS=4.5A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
Parameter
3
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=4.5A, VGS=0V
-
430
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
6.7
-
µC
Notes:
1.Pulse width limited by max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω , IAS=9A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3988P-HF
16
12
o
12
10V
8.0V
7.0V
6.0V
V G =5.0V
T C =150 o C
10V
8.0V
7.0V
6.0V
10
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 C
8
V G =5.0V
8
6
4
4
2
0
0
0
4
8
12
16
0
20
V DS , Drain-to-Source Voltage (V)
4
8
12
16
20
24
28
32
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.2
1.3
I D =4.5A
V G =10V
2.8
Normalized RDS(ON)
Normalized BVDSS
1.2
1.1
1
2.4
2
1.6
1.2
0.8
0.9
0.4
0
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.4
8
1.2
T j = 150 o C
Normalized VGS(th)
10
T j = 25 o C
IS (A)
6
4
1
0.8
0.6
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3988P-HF
f=1.0MHz
12
10000
I D =4.5A
V DS =300V
V DS =360V
V DS =480V
8
C iss
1000
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C oss
4
100
2
C rss
0
10
0
20
40
60
1
80
Q G , Total Gate Charge (nC)
5
Fig 7. Gate Charge Characteristics
9
13
17
21
V DS , Drain-to-Source Voltage (V)
25
29
Fig 8. Typical Capacitance Characteristics
100
1
100us
Operation in this
area limited by
RDS(ON)
10
ID (A)
1ms
10ms
100ms
1
o
1s
DC
T c =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4