A-POWER AP3R604GH

AP3R604GH
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
40V
RDS(ON)
3.7mΩ
ID
G
75A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
□
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current (Chip)
125
A
75
A
Continuous Drain Current
4
[email protected]=100℃
Continuous Drain Current
4
75
A
IDM
Pulsed Drain Current1
300
A
[email protected]=25℃
Total Power Dissipation
104
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
[email protected]=25℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data & specifications subject to change without notice
Value
Units
1.2
℃/W
62.5
℃/W
1
200903191
AP3R604GH
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
40
-
-
V
VGS=10V, ID=40A
-
-
3.7
mΩ
VGS=4.5V, ID=30A
-
-
5.6
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
100
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=40A
-
28
45
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
5.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
16
-
nC
VDS=20V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=40A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
36
-
ns
tf
Fall Time
RD=0.5Ω
-
105
-
ns
Ciss
Input Capacitance
VGS=0V
-
2750 4400
pF
Coss
Output Capacitance
VDS=25V
-
600
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
175
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
2.3
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=40A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time2
IS=10A, VGS=0V,
-
45
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
58
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
4.Package limitation current is 75A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3R604GH
300
160
10V
7.0V
6.0V
5.0V
ID , Drain Current (A)
250
200
o
T C =150 C
ID , Drain Current (A)
o
T C =25 C
V G = 4.0 V
150
100
10V
7.0V
6.0V
5.0V
120
V G =4.0V
80
40
50
0
0
0.0
1.0
2.0
3.0
4.0
0.0
5.0
1.0
V DS , Drain-to-Source Voltage (V)
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
4.4
I D =30A
I D =40A
V G =10V
T C =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
4
3.6
3.2
1.6
1.2
0.8
2.8
0.4
2.4
2
4
6
8
-50
10
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
1.6
30
1.2
Normalized VGS(th) (V)
IS(A)
50
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
T j =25 o C
T j =150 o C
0
o
V GS , Gate-to-Source Voltage (V)
20
10
0.8
0.4
0
0.0
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3R604GH
10
f=1.0MHz
4000
V DS =20V
V DS =24V
V DS =32V
6
3000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =40A
8
2000
4
1000
C oss
2
C rss
0
0
0
10
20
30
40
50
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100us
ID (A)
100
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4