A-POWER AP40N03GP

AP40N03GP
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
17mΩ
▼ Fast Switching Characteristic
ID
G
D
S
40A
TO-220
Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The TO-220 package is widely preferred for all commercial-industrial
applications and suited for low voltage applications such as DC/DC
converters and high efficiency switching circuits.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
40
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
30
A
IDM
Pulsed Drain Current1
169
A
[email protected]=25℃
Total Power Dissipation
50
W
Linear Derating Factor
0.4
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
2.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
200910094
AP40N03GP
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.037
-
V/℃
VGS=10V, ID=20A
-
14
17
mΩ
VGS=4.5V, ID=16A
-
20
23
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
26
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=24V,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=20A
-
17
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
10
-
nC
VDS=15V
-
7.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22.5
-
ns
tf
Fall Time
RD=0.75Ω
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
800
-
pF
Coss
Output Capacitance
VDS=25V
-
380
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
133
-
pF
Min.
Typ.
-
-
40
A
-
-
169
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
Tj=25℃, IS=40A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP40N03GP
200
100
T C =25 o C
10V
9.0V
8.0V
7.0V
6.0V
120
80
80
ID , Drain Current (A)
160
ID , Drain Current (A)
10V
9.0V
8.0V
7.0V
6.0V
5.0V
o
T C =150 C
5.0V
60
40
4.0V
4.0V
40
V G =3.0V
20
V G =3.0V
0
0
0.0
2.0
4.0
6.0
8.0
10.0
0.0
2.0
6.0
8.0
10.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
32
I D =18A
T C =25 ℃
I D =18A
V G =10V
28
Normalized RDS(ON)
24
RDS(ON) (mΩ)
4.0
V DS , Drain-to-Source Voltage (V)
20
16
1.4
0.8
12
0.2
8
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
100
VGS(th) (V)
IS(A)
1.8
10
1.6
1.4
T j =150 o C
T j =25 o C
1.2
1
1.0
0.2
0.4
0.6
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP40N03GP
f=1.0MHz
1600
16
12
1200
V DS =16V
V DS =20V
V DS =24V
C (pF)
VGS , Gate to Source Voltage (V)
I D =18A
8
4
800
C iss
400
C oss
C rss
0
0
0
4
8
12
16
20
1
24
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
ID (A)
Operation in this
area limited by
RDS(ON)
100us
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
1
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4