A-POWER AP4232AGM

AP4232AGM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
D2
▼ Simple Drive Requirement
D2
D1
D1
▼ Dual N MOSFET Package
BVDSS
30V
RDS(ON)
23mΩ
ID
7.8A
G2
S2
SO-8
S1
G1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
D1
G2
G1
S2
S1
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
30
V
±20
V
3
7.8
A
3
6.2
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
30
A
[email protected]=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201128071
AP4232AGM
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=7A
-
-
23
mΩ
VGS=4.5V, ID=5A
-
-
35
mΩ
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
7
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=7A
-
10
21
nC
VGS(th)
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5.6
-
nC
VDS=15V
-
7.4
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
6.4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=15Ω
-
4.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
620
1150
pF
Coss
Output Capacitance
VDS=25V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=7A, VGS=0V,
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP4232AGM
50
50
40
ID , Drain Current (A)
ID , Drain Current (A)
40
10V
7.0 V
5.0 V
4.5 V
T A = 150 o C
10V
7.0 V
5.0 V
4.5 V
o
T A = 25 C
30
20
V G = 3.0 V
10
0
30
20
V G = 3.0 V
10
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
32
1.6
ID=5A
T A =25 ℃
ID=7A
V G =10V
Normalized RDS(ON)
RDS(ON) (mΩ)
28
24
1.3
1.0
20
16
0.7
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
10
8
Normalized VGS(th) (V)
1.2
IS(A)
6
o
o
T j =150 C
4
T j =25 C
1.0
0.8
2
0
0.6
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4232AGM
f=1.0MHz
1000
16
C iss
V DS =15V
V DS = 18 V
V DS =24V
12
C (pF)
VGS , Gate to Source Voltage (V)
ID=7A
8
C oss
100
C rss
4
0
10
0
4
8
12
16
1
20
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
100us
1ms
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
Duty factor=0.5
0.2
0.1
0.1
PDM
t
0.05
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.02
Rthja = 135℃/W
0.01
Single Pulse
DC
0.01
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
V DS =5V
VG
T j =25 o C
ID , Drain Current (A)
40
T j =150 o C
QG
4.5V
30
QGS
QGD
20
10
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8
7
Millimeters
6
5
E1
1
2
3
E
4
e
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
θ
0
4.00
8.00
1.27 TYP
e
B
A
A1
DETAIL A
L
θ
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
4232AGM
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5