A-POWER AP4410GM

AP4410GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
D
▼ Fast Switching
D
D
D
G
S
30V
RDS(ON)
13.5mΩ
ID
▼ Simple Drive Requirement
SO-8
BVDSS
10A
S
S
Description
D D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
G
S S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
30
V
+25
V
3
10
A
3
8
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
50
A
[email protected]=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
200810203
AP4410GM
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.037
-
V/℃
VGS=10V, ID=10A
-
-
13.5
mΩ
VGS=4.5V, ID=5A
-
-
22
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=15V, ID=10A
-
20
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= +25V
-
-
+100
nA
ID=10A
-
13.5
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
7
-
nC
VDS=25V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
16
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
21
-
ns
tf
Fall Time
RD=25Ω
-
15
-
ns
Ciss
Input Capacitance
VGS=0V
-
1160
-
pF
Coss
Output Capacitance
VDS=15V
-
240
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
165
-
pF
Min.
Typ.
IS=2.1A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
17.1
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4410GM
150
200
o
T A =150 o C
10V
8.0V
150
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 C
6.0V
100
50
8.0V
100
6.0V
50
V G =4.0V
V G =4.0V
0
0
0
1
2
3
4
5
6
7
0
8
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
20
I D =10A
I D =10A
V G =10V
1.6
T A =25 o C
Normalized RDS(ON)
18
RDS(ON) (mΩ)
10V
16
14
1.4
1.2
1
12
0.8
10
0.6
3
4
5
6
7
8
9
10
11
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
100.00
10.00
IS(A)
VGS(th) (V)
2
o
o
T j =150 C
T j =25 C
1.00
1
0.10
0
0.01
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Jujnction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4410GM
f=1.0MHz
10000
10
I D =10A
V DS =15V
8
1000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
12
6
4
C oss
C rss
100
2
0
10
0
5
10
15
20
25
30
1
6
11
16
21
26
31
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
1ms
10
ID (A)
Normalized Thermal Response (Rthja)
DUTY=0.5
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=125 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Circuit
Charge
Q
Fig 12. Gate Charge Circuit
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
8
7
6
5
E1
1
2
3
4
e
B
E
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
c
0.19
0.22
0.25
D
4.80
4.90
5.00
E
5.80
6.15
6.50
E1
3.80
3.90
4.00
e
1.27 TYP
G
0.254 TYP
L
0.38
-
0.90
α
0.00
4.00
8.00
A
A1
G
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
Part Number
4410GM
YWWSSS
Package Code
meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5