AP4430GEM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Fast Switching Characteristic
▼ Low On-resistance
D
D
D
SO-8
S
S
S
BVDSS
30V
RDS(ON)
4mΩ
ID
20A
G
Description
D
G
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching,ruggedized device
design, ultra low on-resistance and cost-effectiveness.
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
30
V
±12
V
3
20
A
3
16
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
80
A
PD@TA=25℃
Total Power Dissipation
2.5
W
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Linear Derating Factor
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
200806053
AP4430GEM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=20A
-
-
4
mΩ
VGS=4.5V, ID=16A
-
-
5
mΩ
8
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=1mA
2
VGS=2.5V, ID=12A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
IDSS
IGSS
Max. Units
0.3
-
1.2
V
VDS=10V, ID=20A
-
20
-
S
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±30
uA
ID=20A
-
63
100
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=25V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
26
-
nC
VDS=15V
-
13
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
100
-
ns
tf
Fall Time
RD=15Ω
-
45
-
ns
Ciss
Input Capacitance
VGS=0V
-
4600 7360
pF
Coss
Output Capacitance
VDS=25V
-
745
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
750
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1
1.5
Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
2
Min.
Typ.
IS=2A, VGS=0V
Test Conditions
-
-
Max. Units
1.2
V
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
46
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
54
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4430GEM
80
80
60
ID , Drain Current (A)
T A = 25 C
ID , Drain Current (A)
T A = 150 o C
10V
7.0V
5.0V
4.5V
V G = 2 .0V
o
40
10V
7.0V
5.0V
4.5V
V G = 2 .0V
60
40
20
20
0
0
0
0.4
0.8
1.2
1.6
2
0
V DS , Drain-to-Source Voltage (V)
1
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
8
1.8
I D =16A
I D = 20 A
V G =10V
Normalized RDS(ON)
RDS(ON) (mΩ)
T A =25 o C
6
4
1.4
1.0
0.6
2
0
2
4
6
8
25
10
50
75
100
125
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6.0
16
12
T j =25 o C
RDS(ON) (mΩ)
IS(A)
T j =150 o C
8
V GS =4.5V
4.0
V GS =10V
2.0
4
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0
20
40
60
80
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3
AP4430GEM
f=1.0MHz
10000
10
C iss
I D = 20 A
V DS = 15 V
V DS = 20 V
V DS = 25 V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
1000
C oss
C rss
4
2
100
0
0
40
80
120
1
160
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
100us
1ms
10
ID (A)
Normalized Thermal Response (Rthja)
Duty factor=0.5
10ms
1
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 125℃/W
Single Pulse
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
VG
ID , Drain Current (A)
V DS =5V
T j =150 o C
60
T j =25 o C
QG
4.5V
QGS
40
QGD
20
Charge
Q
0
0
1
2
3
4
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8
7
Millimeters
6
5
E1
1
2
3
E
4
e
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
θ
0
4.00
8.00
1.27 TYP
e
B
A
A1
DETAIL A
L
θ
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
4430GEM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5