A-POWER AP4438GSM-HF

AP4438GSM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
▼ Simple Drive Requirement
D
D
▼ Good Recovery Time
D
D
▼ Fast Switching Performance
SO-8
S
30V
RDS(ON)
11.5mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
11.7A
S
S
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
Schottky Diode
G
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
30
V
+12
V
3
11.7
A
3
9.3
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
50
A
VKA
Schottky Reverse Voltage
30
V
[email protected]=25℃
Continous Forward Current
1
A
IFM
Pulsed Diode Forward Current
25
A
Max Power Dissipation (MOSFET)
2.5
W
Max Power Dissipation (Schottky)
2.0
W
[email protected]=25℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
3
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient (MOSFET)
50
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient 3(Schottky)
60
℃/W
Data and specifications subject to change without notice
1
201008121
AP4438GSM-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=11A
-
-
11.5
mΩ
VGS=4.5V, ID=7A
-
-
18
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
18
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
ID=7A
-
10
16
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5.5
-
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
23
-
ns
tf
Fall Time
VGS=10V
-
5.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
810
1300
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Min.
Typ.
IS=1.0A, VGS=0V
-
0.48
0.5
V
VGS=0V,
-
17
-
ns
-
8
-
nC
Source-Drain Diode
Symbol
Parameter
Test Conditions
2
VSD
Diode+Schottky Forward On Voltage
trr
Body Diode+Schottky Reverse Recovery Time IS=7A,
Qrr
Body Diode+Schottky Reverse Recovery Charge
dI/dt=100A/µs
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10 sec.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4438GSM-HF
50
50
o
o
T A =25 C
40
ID , Drain Current (A)
ID , Drain Current (A)
40
10V
7.0V
6.0V
5.0V
V G = 4.0V
T A = 150 C
10V
7.0V
6.0V
5.0V
V G =4.0V
30
20
10
30
20
10
0
0
0
1
2
3
0
4
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
1.8
ID=7A
T A =25 o C
I D = 11 A
V G =10V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
14
12
1.4
1.2
1.0
10
0.8
0.6
8
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
12
1.50
I D =10mA
10
IS(A)
Normalized VGS(th) (V)
1.25
T j =150 o C
8
T j =25 o C
6
4
1.00
0.75
2
MOSFET+Schottky
0
0.50
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4438GSM-HF
10
f=1.0MHz
1200
V DS = 15 V
1000
8
C iss
800
C (pF)
VGS , Gate to Source Voltage (V)
ID=7A
6
600
4
400
C oss
C rss
2
200
0
0
0
4
8
12
16
20
1
24
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
ID (A)
10
1ms
1
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
0.01
Normalized Thermal Response (R thja)
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 125℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4