A-POWER AP4513GM-HF

AP4513GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
▼ Low On-resistance
D1
D1
▼ Fast Switching Performance
35V
RDS(ON)
D2
36mΩ
ID
G2
▼ RoHS Compliant & Halogen-Free
S1
SO-8
5.8A
P-CH BVDSS
S2
G1
Description
-35V
RDS(ON)
68mΩ
ID
-4.3A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
D2
D1
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
35
-35
V
+20
+20
V
Continuous Drain Current
3
5.8
-4.3
A
Continuous Drain Current
3
4.7
-3.4
A
20
-20
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
4
1
2
W
0.016
W/℃
12.5
12.5
mJ
5
-5
A
0.05
0.05
mJ
EAR
Repetitive Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
201006284
AP4513GM-HF
o
N-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
35
-
-
V
-
0.03
-
V/℃
VGS=10V, ID=5A
-
-
36
mΩ
VGS=4.5V, ID=3A
-
-
60
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=70oC) VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=5A
-
6
10
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=28V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
8
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=15Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
470
750
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=5A, VGS=0V
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
2
AP4513GM-HF
P-CH Electrical [email protected] j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient
RDS(ON)
Min.
Typ.
-35
-
-
V
Reference to 25℃,ID=-1mA
-
-0.03
-
V/℃
VGS=-10V, ID=-4A
-
-
68
mΩ
VGS=-4.5V, ID=-2A
-
-
100
mΩ
VGS=0V, ID=-250uA
2
Static Drain-Source On-Resistance
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-4A
-
6
10
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-28V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
VDS=-15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
20
-
ns
tf
Fall Time
RD=15Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
410
660
pF
Coss
Output Capacitance
VDS=-25V
-
95
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Min.
Typ.
IS=-1.7A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-4A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
4.Starting Tj=25oC , VDD=25V , L=1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4513GM
N-Channel
30
30
10V
7.0V
T A = 150 o C
10V
7.0V
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 o C
5.0V
20
4.5V
10
20
5.0V
4.5V
10
V G =3.0V
V G =3.0V
0
0
0
1
2
3
4
5
0
1
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
65
I D =5A
V G =10V
I D =3A
o
T A =25 C
Normalized RDS(ON)
55
RDS(ON0 (mΩ )
2
V DS , Drain-to-Source Voltage (V)
45
1.4
1.0
35
0.6
25
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
5
Normalized VGS(th) (V)
IS(A)
4
3
T j =150 o C
T j =25 o C
2
1.1
0.7
1
0.3
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
T j ,Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4513GM-HF
N-Channel
f=1.0MHz
1000
ID=5A
V DS = 28 V
C iss
9
C (pF)
VGS , Gate to Source Voltage (V)
12
6
100
C oss
C rss
3
10
0
0
4
8
12
1
16
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
o
T A =25 C
Single Pulse
10s
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135o C/W
0.001
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4513GM-HF
P-Channel
30
30
o
20
- 10V
- 7.0V
o
- 10V
- 7.0V
- 5.0V
T A = 150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
T A =25 C
- 4.5V
10
20
- 5.0V
- 4.5V
10
V G = - 3.0V
V G = - 3.0V
0
0
0
1
2
3
4
5
0
6
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
Fig 2. Typical Output Characteristics
1.8
95
I D = -4 A
V G = - 10V
I D = -2 A
o
T A =25 C
Normalized RDS(ON)
85
RDS(ON) (mΩ)
2
-V DS , Drain-to-Source Voltage (V)
75
1.4
1.0
65
0.6
55
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
Normalized -VGS(th) (V)
1.5
3
-IS(A)
0
2
T j =150 o C
T j =25 o C
1.1
0.7
1
0.3
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4513GM-HF
P-Channel
f=1.0MHz
12
1000
I D =-4A
V DS =-28V
C iss
8
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
C oss
100
C rss
4
2
10
0
0.0
3.0
6.0
9.0
1
12.0
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
-ID (A)
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
10s
DC
0.01
Normalized Thermal Response (R thja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7