A-POWER AP4530GH

AP4530GH
RoHS-compliant Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D1/D2
N-CH BVDSS
▼ Good Thermal Performance
RDS(ON)
▼ Fast Switching Performance
ID
40V
32mΩ
7.4A
P-CH BVDSS
S1
G1
S2
G2
Description
TO-252-4L
-40V
RDS(ON)
64mΩ
ID
-5.5A
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
40
-40
V
±20
±20
V
Continuous Drain Current
3
7.4
-5.5
A
Continuous Drain Current
3
6.1
-4.4
A
50
-50
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
3.125
W
Linear Derating Factor
0.025
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Value
Unit
Max.
10
℃/W
Max.
40
℃/W
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
200904071-1/7
AP4530GH
o
N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Min.
Typ.
40
-
-
V
VGS=10V, ID=6A
-
-
32
mΩ
VGS=4.5V, ID=4A
-
-
45
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=6A
-
6
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=40V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=32V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=6A
-
6.7
14
nC
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Test Conditions
o
IGSS
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
1.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.4
-
nC
2
td(on)
Turn-on Delay Time
VDS=20V
-
4.5
-
ns
tr
Rise Time
ID=6A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=3.3Ω
-
2.8
-
ns
Ciss
Input Capacitance
VGS=0V
-
450
720
pF
Coss
Output Capacitance
VDS=25V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
2.3
Ω
Min.
Typ.
IS=2.4A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
nC
2/7
AP4530GH
P-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Test Conditions
Typ.
-40
-
-
V
VGS=-10V, ID=-4A
-
-
64
mΩ
VGS=-4.5V, ID=-3A
-
-
95
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VGS=0V, ID=-250uA
2
Max. Units
VDS=-10V, ID=-4A
-
4
-
S
o
VDS=-40V, VGS=0V
-
-
-10
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-32V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-4A
-
8
13
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-32V
-
1.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.5
-
nC
2
td(on)
Turn-on Delay Time
VDS=-20V
-
8
-
ns
tr
Rise Time
ID=-4A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
23
-
ns
tf
Fall Time
RD=5Ω
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
605
970
pF
Coss
Output Capacitance
VDS=-25V
-
75
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.5
8.3
Ω
Min.
Typ.
IS=-2.4A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-4A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/7
AP4530GH
N-Channel
40
40
30
20
V G =3.0V
30
20
V G =3.0V
10
10
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
36
ID=4A
ID=6A
V G =10V
T C =25 o C
Normalized RDS(ON)
34
RDS(ON) (mΩ)
10V
7.0V
5.0V
4.5V
T C = 150 C
ID , Drain Current (A)
ID , Drain Current (A)
o
10V
7.0V
5.0V
4.5V
o
T C = 25 C
32
30
28
1.4
1.0
26
0.6
24
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.6
T j =150 o C
6
Normalized VGS(th) (V)
IS(A)
8
T j =25 o C
4
1.2
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP4530GH
N-Channel
f=1.0MHz
1000
I D =6A
V DS =32V
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
100
C oss
C rss
4
10
0
0
4
8
12
1
16
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
100us
1ms
10ms
100ms
1s
1
o
0.1
T A =25 C
Single Pulse
DC
0.01
Normalized Thermal Response (R thja)
100
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
Rthja=75℃/W
Single Pulse
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
ID , Drain Current (A)
V DS =5V
VG
30
T j =25 o C
QG
T j =150 o C
4.5V
20
QGS
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
AP4530GH
P-Channel
40
30
-ID , Drain Current (A)
-ID , Drain Current (A)
30
20
V G = - 3.0V
10
-10V
-7.0V
-5.0V
-4.5V
T C = 150 o C
-10V
-7.0V
-5.0V
-4.5V
o
T C = 25 C
20
10
V G = - 3.0V
0
0
0
2
4
6
8
0
10
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
90
1.8
I D = -3 A
o
T C =25 C
1.6
I D = -4A
V G = -10V
Normalized RDS(ON)
RDS(ON) (mΩ)
80
70
1.4
1.2
1.0
60
0.8
0.6
50
2
4
6
8
-50
10
-V GS ,Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.4
8
Normalized -VGS(th) (V)
1.2
-IS(A)
6
T j =150 o C
T j =25 o C
4
1.0
0.8
2
0
0.6
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6/7
AP4530GH
P-Channel
f=1.0MHz
10000
10
I D = -4 A
V DS = -32 V
8
1000
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
4
100
C oss
C rss
2
0
10
0
4
8
12
16
20
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
100us
-ID (A)
10
1ms
10ms
100ms
1s
1
o
0.1
DC
T A =25 C
Single Pulse
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
0.01
Rthja=75℃/W
Single Pulse
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
QG
T j =150 o C
20
-4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7/7
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252(4L)
A
Millimeters
SYMBOLS
B
MIN
NOM
MAX
A
6.40
6.6
6.80
B
5.2
5.35
5.50
C
9.40
9.80
10.20
D
2.40
2.70
3.00
1.27 REF.
P
S
E3
C
M
R
D
S
P
0.50
0.65
0.80
E3
3.50
4.00
4.50
R
0.80
1.00
1.20
G
0.40
0.50
0.60
H
2.20
2.30
2.40
J
0.45
0.50
0.55
K
0.00
0.075
0.15
L
0.90
1.20
1.50
M
5.40
5.60
5.80
1.All Dimensions Are in Millimeters.
G
2.Dimension Does Not Include Mold Protrusions.
H
K
J
L
Part Marking Information & Packing : TO-252(4L)
Part Number
Package Code
meet Rohs requirement
4530GH
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence