AP4530GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
▼ Fast Switching Performance
N-CH BVDSS
D2
RDS(ON)
D1
D1
▼ Lower Gate Charge
40V
36mΩ
ID
G2
P-CH BVDSS
S2
G1
SO-8
5.7A
S1
Description
-40V
RDS(ON)
68mΩ
ID
-4.2A
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
D1
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D2
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
40
-40
V
±20
±20
V
Continuous Drain Current
3
5.7
-4.2
A
Continuous Drain Current
3
4.5
-3.4
A
20
-20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
Linear Derating Factor
W
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
201101071
AP4530GM
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Test Conditions
Typ.
40
-
-
V
VGS=10V, ID=5A
-
-
36
mΩ
VGS=4.5V, ID=3A
-
-
50
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS=0V, ID=250uA
2
Max. Units
VDS=10V, ID=5A
-
5
-
S
o
VDS=40V, VGS=0V
-
-
10
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=32V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=5A
-
7
12
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=30V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.4
-
nC
2
td(on)
Turn-on Delay Time
VDS=20V
-
4
-
ns
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=20Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
380
610
pF
Coss
Output Capacitance
VDS=25V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Min.
Typ.
IS=1.5A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=5A, VGS=0V
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
2
AP4530GM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Test Conditions
Drain-Source Breakdown Voltage
Typ.
-40
-
2
Max. Units
-
V
VGS=-10V, ID=-3A
-
-
68
mΩ
VGS=-4.5V, ID=-2A
-
-
100
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-4A
-
4
-
S
o
VDS=-40V, VGS=0V
-
-
-10
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-32V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-3A
-
8
13
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Min.
VGS=0V, ID=-250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-30V
-
1.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.3
-
nC
VDS=-20V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
24
-
ns
tf
Fall Time
RD=20Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
605
970
pF
Coss
Output Capacitance
VDS=-25V
-
75
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.5A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-3A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3
AP4530GM
N-Channel
20
20
15
ID , Drain Current (A)
ID , Drain Current (A)
T A = 150 C
10V
7.0V
5.0V
4.5V
V G =3.0V
15
10
5
0
10
5
0
0
2
4
6
8
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
80
I D =5A
V G =10V
I D =3A
Normalized RDS(ON)
T A =25 o C
60
RDS(ON0 (mΩ)
10V
7.0V
5.0V
4.5V
V G =3.0V
o
o
T A =25 C
40
20
1.4
1.0
0.6
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.6
8
T j =25 o C
Normalized VGS(th) (V)
T j =150 o C
IS(A)
6
4
1.2
0.8
2
0
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4530GM
N-Channel
f=1.0MHz
12
1000
VGS , Gate to Source Voltage (V)
C iss
ID=5A
V DS = 30 V
C (pF)
8
100
C oss
C rss
4
10
0
0
3
6
9
12
15
1
18
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
100us
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
T j =25 o C
ID , Drain Current (A)
V DS =5V
VG
T j =150 o C
QG
20
4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
AP4530GM
P-Channel
40
30
- 10V
- 7.0V
- 5.0V
- 4.5V
-ID , Drain Current (A)
30
20
V G = - 3.0V
10
- 10V
- 7.0V
- 5.0V
- 4.5V
T A = 150 o C
-ID , Drain Current (A)
T A =25 o C
20
10
V G = - 3.0V
0
0
0
2
4
6
0
8
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
90
I D = -3 A
V G = - 10V
I D = -2 A
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
80
70
1.4
1.0
60
0.6
50
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.6
Normalized -VGS(th) (V)
-IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.2
0.8
2
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4530GM
P-Channel
f=1.0MHz
12
1000
C iss
8
I D =-3A
V DS =-30V
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
100
C oss
C rss
4
2
10
0
0.0
4.0
8.0
12.0
1
16.0
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
100us
1ms
1
10ms
0.1
100ms
1s
o
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
100
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja=135 oC/W
Single Pulse
DC
0.01
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V DS =-5V
VG
-ID , Drain Current (A)
25
T j =25 o C
20
QG
T j =150 o C
-4.5V
QGS
15
QGD
10
5
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8
7
Millimeters
6
5
E1
1
2
3
E
4
e
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
θ
0
4.00
8.00
1.27 TYP
e
B
A
A1
DETAIL A
L
θ
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number Package Code
meet Rohs requirement
4530GM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
8