A-POWER AP4810GSM

AP4810GSM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
▼ Simple Drive Requirement
D
D
▼ Good Recovery Time
D
D
G
S
30V
RDS(ON)
13.5mΩ
ID
▼ Fast Switching Performance
SO-8
BVDSS
11A
S
S
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
Schottky Diode
G
S
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
30
V
+20
V
3
11
A
3
9.3
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
50
A
VKA
Schottky Reverse Voltage
30
V
[email protected]=25℃
Continous Forward Current
1
A
IFM
Pulsed Diode Forward Current
25
A
[email protected]=25℃
Max Power Dissipation (MOSFET)
2.5
W
Max Power Dissipation (Schottky)
2.0
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient (MOSFET)
3
Maximum Thermal Resistance, Junction-ambient (Schottky)
Data and specifications subject to change without notice
Value
Unit
50
℃/W
60
℃/W
1
200910296
AP4810GSM
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=10A
-
-
13.5
mΩ
VGS=4.5V, ID=5A
-
-
20
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=11A
-
18
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
100
uA
Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V
-
-
1
mA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=10A
-
14
22.5
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
3.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
8.4
-
nC
VDS=15V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
27
-
ns
tf
Fall Time
RD=15Ω
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
1010 1200
pF
Coss
Output Capacitance
VDS=25V
-
200
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Min.
Typ.
-
0.48
Source-Drain Diode
Symbol
Parameter
Test Conditions
2
VSD
Diode+Schottky Forward On Voltage
IS=1.0A, VGS=0V
IS
Max Body-Diode+Schottky Continous Current
trr
Body Diode+Schottky Reverse Recovery Time IS=10A,
Qrr
Body Diode+Schottky Reverse Recovery Charge
VGS=0V,
dI/dt=100A/µs
Max. Units
0.5
V
5
A
-
21
-
ns
-
13
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10 sec.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4810GSM
50
50
o
T A =25 C
10V
7.0V
5.0V
4.5V
40
ID , Drain Current (A)
40
ID , Drain Current (A)
o
T A = 150 C
10V
7 .0V
5.0V
4.5V
30
20
V G =3.0V
30
20
V G =3.0V
10
10
0
0
0
1
2
3
4
5
0
6
1
2
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.6
ID=5A
T A =25 ℃
I D = 10 A
V G =10V
18
Normalized RDS(ON)
RDS(ON) (mΩ)
1.4
16
14
12
1.2
1.0
0.8
10
0.6
8
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
50
100
150
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.50
T j =125 o C
1
T j =25 o C
1.25
Normalized VGS(th) (V)
IS(A)
0
T j , Junction Temperature ( C)
0.1
0.01
1.00
0.75
MOSFET+Schottky
0.001
0.50
0
0.2
0.4
0.6
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.8
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4810GSM
f=1.0MHz
10000
14
I D = 10 A
V DS = 15 V
V DS = 20 V
V DS = 25 V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
1000
4
C oss
C rss
2
100
0
0
10
20
30
1
40
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (R thja)
1
100us
1ms
10
ID (A)
13
V DS , Drain-to-Source Voltage (V)
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 125℃/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
V DS =5V
ID , Drain Current (A)
40
QG
T j =25 o C
T j =150 o C
4.5V
30
QGS
QGD
20
10
Charge
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4