AP4880GEM
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Fast Switching Characteristic
▼ Low On-resistance
D
D
D
BVDSS
25V
RDS(ON)
8.5mΩ
ID
▼ RoHS Compliant
SO-8
S
S
S
14A
G
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,ruggedized
device design, ultra low on-resistance and cost-effectiveness.
G
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
25
V
±16
V
3
14
A
3
11
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
50
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
50
℃/W
200711061-1/4
AP4880GEM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
25
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=14A
-
-
8.5
mΩ
VGS=4.5V, ID=10A
-
-
15
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=10V, ID=14A
-
13.5
-
S
o
VDS=25V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=20V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±16V
-
-
±30
uA
ID=14A
-
23
37
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=1mA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
17
-
nC
VDS=15V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
36
-
ns
tf
Fall Time
RD=15Ω
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
900
1440
pF
Coss
Output Capacitance
VDS=25V
-
490
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
195
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Ω
Min.
Typ.
IS=2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=14A, VGS=0V,
-
45
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
42
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
2/4
AP4880GEM
50
50
40
ID , Drain Current (A)
ID , Drain Current (A)
40
10V
7.0V
5.0V
4.5V
V G = 4 .0V
T A = 150 o C
10V
T A = 25 C
7.0V
5.0V
4.5V
V G = 4 .0V
o
30
20
30
20
10
10
0
0
0
1
2
3
4
0
V DS , Drain-to-Source Voltage (V)
2
4
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
1.8
I D =10A
I D = 14 A
V G =10V
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
40
30
20
1.4
1.0
10
0
0.6
2
4
6
8
10
25
50
75
100
125
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20.0
12
T j =150 o C
T j =25 o C
10
16.0
V GS =4.5V
RDS(ON) (mΩ)
IS(A)
8
6
12.0
V GS =10V
8.0
4
4.0
2
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0
10
20
30
40
50
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3/4
AP4880GEM
f=1.0MHz
14
10000
VGS , Gate to Source Voltage (V)
12
I D = 14 A
V DS = 12 V
V DS = 16 V
V DS = 20 V
C iss
1000
C oss
C (pF)
10
8
C rss
6
100
4
2
10
0
0
10
20
30
40
Q G , Total Gate Charge (nC)
1
50
Fig 7. Gate Charge Characteristics
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
29
Fig 8. Typical Capacitance Characteristics
1
100
100us
Normalized Thermal Response (Rthja)
Duty factor=0.5
1ms
10
10ms
ID (A)
5
100ms
1
1s
0.1
o
T A =25 C
Single Pulse
DC
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 125℃/W
Single Pulse
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
VG
ID , Drain Current (A)
V DS =5V
60
QG
4.5V
T j =25 o C
T j =150 o C
QGS
40
QGD
20
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4