AP4924GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
Dual N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
▼ Low On-resistance
▼ Fast Switching
D2
D1
D1
BVDSS
20V
RDS(ON)
35mΩ
ID
6A
G2
S2
SO-8
S1
G1
Description
D2
D1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
G2
G1
S1
S2
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
+12
V
3
6
A
3
4.8
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
35
A
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient 3
62.5
℃/W
Data and specifications subject to change without notice
1
200904031
AP4924GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Min. Typ. Max. Units
20
-
-
V
VGS=4.5V, ID=6A
-
-
35
mΩ
VGS=2.5V, ID=5.2A
-
-
50
mΩ
0.5
-
1.2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=6A
-
18.5
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=16V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100 nA
ID=6A
-
9
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
1.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.2
-
nC
VDS=10V
-
6.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=4.5V
-
20
-
ns
tf
Fall Time
RD=10Ω
-
15
-
ns
Ciss
Input Capacitance
VGS=0V
-
300
-
pF
Coss
Output Capacitance
VDS=8V
-
255
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Min. Typ. Max. Units
VD=VG=0V , VS=1.2V
-
-
1.67
A
Tj=25℃, IS=1.7A, VGS=0V
-
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRI
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4924GM
25
25
o
T C =25 C
20
2.5V
15
10
V GS =2.0V
5
2.5V
15
10
V GS =2.0V
5
0
0
0
1
2
3
4
5
6
0
V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
45
I D =6A
T C =25 ℃
I D =6A
V GS =4.5V
1.6
Normalized RDS(ON)
40
RDS(ON) (mΩ )
4.5V
3.5V
3.0V
20
ID , Drain Current (A)
ID , Drain Current (A)
T C =150 o C
4.5V
3.5V
3.0V
35
30
1.4
1.2
1.0
25
0.8
0.6
20
2
3
4
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
5
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP4924GM
3
8
7
6
ID , Drain Current (A)
2
PD (W)
5
4
3
1
2
1
0
0
25
50
75
100
125
0
150
50
100
150
T c ,Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Normalized Thermal Response (Rthja)
Duty Factor = 0.5
10
1ms
ID (A)
10ms
1
100ms
0.1
0.1
0.05
0.02
0.01
P DM
0.01
1s
0.1
10s
DC
T C =25 o C
Single Pulse
0.2
t
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4
AP4924GM
I D =6A
V DS =10V
5
Ciss
4
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
6
3
Coss
100
Crss
2
1
0
10
0
2
4
6
8
10
12
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1.5
100.00
10.00
1
T j =25 o C
VGS(th) (V)
IS(A)
T j =150 o C
1.00
0.5
0.10
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
-50
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
AP4924GM
VDS
90%
RD
VDS
D
0.5x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
10%
S
+
VGS
VGS
4..5V
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
D
4.5V
0.5 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
QGS
QGD
VGS
+
1~ 3 mA
I
G
I
D
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
6